POWER MOSFET. IRHLG770Z4 Datasheet

IRHLG770Z4 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHLG770Z4
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PD-95865
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG770Z4 100K Rads (Si)
IRHLG730Z4 300K Rads (Si)
RDS(on)
0.6
0.6
ID
1.07A
1.07A
IRHLG770Z4
60V, Quad N-CHANNEL
TECHNOLOGY
™
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n Complimentary P-Channel Available -
IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.07
0.67
4.28
1.0
0.01
±10
13
1.07
0.1
7.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
12/28/06


IRHLG770Z4 Datasheet
Recommendation IRHLG770Z4 Datasheet
Part IRHLG770Z4
Description (IRHLG7x0Z4) POWER MOSFET
Feature IRHLG770Z4; www.DataSheet4U.com PD-95865 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Prod.
Manufacture International Rectifier
Datasheet
Download IRHLG770Z4 Datasheet




International Rectifier IRHLG770Z4
IRHLG770Z4
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
1.0
0.9
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ
0.08
-4.04
10
162
39
2.1
13.8
Max Units
—V
— V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
0.6
VGS = 4.5V, ID = 0.67A Ã
2.0
1.0
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
11
V
mV/°C
S
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.67A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.07A
VDS = 30V
VDD = 30V, ID = 1.07A,
VGS = 5.0V, RG = 24
Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
— pF
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
1.07
4.28
A
VSD Diode Forward Voltage
— — 1.2 V
Tj = 25°C, IS = 1.07A, VGS = 0V Ã
trr Reverse Recovery Time
— — 51 ns Tj = 25°C, IF = 1.07A, di/dt 100A/µs
QRR Reverse Recovery Charge
— — 70 nC
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 125 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
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International Rectifier IRHLG770Z4
PRraed-IirartaiodniaCtiohnaracteristics
IRHLGG777700ZZ44
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
Up to 300K Rads (Si)1
Min Max
60 —
1.0 2.0
— 100
— -100
— 1.0
— 0.5
— 0.6
Units
V
nA
µA
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
VGS = 4.5V, ID = 0.67A
VGS = 4.5V, ID = 0.67A
VSD Diode Forward Voltage „
— 1.2
V
VGS = 0V, ID = 1.07A
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V -8V -10V
Br 37
I 60
Au 84
305 39 60 60 60 60 60 35 30 20
370 34 60 60 60 60 60 20 15 -
390 30 60 60 60 60
-
-
-
-
70
60
50
40
30
20
10
0
0 -2 -4 -6 -8 -10 -12
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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