POWER MOSFET. IRHLNA73064 Datasheet

IRHLNA73064 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHLNA73064
www.DataSheet4U.com
PD-97177A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHLNA77064 100K Rads (Si)
IRHLNA73064 300K Rads (Si)
RDS(on)
0.012
0.012
ID
56A*
56A*
IRHLNA77064
60V, N-CHANNEL
TECHNOLOGY
™
SMD-2
Internatio
MOSFETs
nparol vRideecstiimfieprle’ssoRlu7tTioMnLtooginicteLrfeacvienlg
Power
CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
56*
56*
224
250
2.0
±10
402
56
25
6.9
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
04/06/07


IRHLNA73064 Datasheet
Recommendation IRHLNA73064 Datasheet
Part IRHLNA73064
Description (IRHLNA7x064) POWER MOSFET
Feature IRHLNA73064; www.DataSheet4U.com PD-97177A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) Pr.
Manufacture International Rectifier
Datasheet
Download IRHLNA73064 Datasheet




International Rectifier IRHLNA73064
IRHLNA77064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60 — —
V
VGS = 0V, ID = 250µA
BVDSS/TJ Temperature Coefficient of Breakdown —
Voltage
0.07 —
V/°C Reference to 25°C, ID = 1.0mA
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.012
VGS = 4.5V, ID = 56A Ã
VGS(th)
Gate Threshold Voltage
1.0 — 2.0 V
VDS = VGS, ID = 250µA
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
— -6.6 — mV/°C
32 — —
S
VDS = 10V, IDS = 56A Ã
IDSS
Zero Gate Voltage Drain Current
— — 1.0
— — 10 µA
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — 100 nA
— — -100
VGS = 10V
VGS = -10V
Qg Total Gate Charge
— — 151
VGS = 4.5V, ID = 56A
Qgs Gate-to-Source Charge
— — 30 nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 70
td(on)
Turn-On Delay Time
— — 51
VDD = 30V, ID = 56A,
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— — 170 ns
— — 110
— — 17
VGS = 4.5V, RG = 2.35
LS + LD
Total Inductance
— 4.0 — nH Measured from the center of
drain pad to center of source pad
Ciss Input Capacitance
— 10220 —
VGS = 0V, VDS = 25V
Coss
Output Capacitance
— 2343 — pF
f = 100KHz
Crss
Reverse Transfer Capacitance
— 40 —
Rg Gate Resistance
0.56
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 56*
ISM Pulse Source Current (Body Diode) À
— — 224
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 214 ns
QRR Reverse Recovery Charge
— — 1.16 µC
Tj = 25°C, IS = 56A, VGS = 0V Ã
Tj = 25°C, IF =56A, di/dt 100A/µs
VDD 30V Ã
ton Forward Turn-On Time
* Current is limited by package
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
1.6
0.5
°C/W
Test Conditions
soldered to a 2” square copper-cladboard
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com



International Rectifier IRHLNA73064
PRraed-IirartaiodniaCtiohnaracteristics
IRHLNA77064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-2)
Upto 300K Rads (Si)1
Min Max
60 —
1.0 2.0
— 100
— -100
— 10
— 0.01
— 0.012
VSD Diode Forward Voltage„
1. Part numbers IRHLNA77064, IRHLNA73064
1.2
Units
V
nA
µA
V
Test Conditions ˆ
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS=0V
VGS = 4.5V, ID = 56A
VGS = 4.5V, ID = 56A
VGS = 0V, ID = 56A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -3V -4V -5V -6V -7V -8V -9V -10V
Br 37
I 60
Au 84
305 39 60 60 50 45 40 30 25 20 15
370 34 60 60 60 60
30 20 10 10
-
390 30 60 60 60 50 25
-
--
80
60
40
20
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)