POWER MOSFET. IRHLNA797064 Datasheet

IRHLNA797064 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHLNA797064
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PD-97174A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHLNA797064 100K Rads (Si)
IRHLNA793064 300K Rads (Si)
RDS(on)
0.015
0.015
ID
-56A*
-56A*
2N7622U2
IRHLNA797064
60V, P-CHANNEL
TECHNOLOGY
™
SMD-2
Internation
MOSFETs
al
pr
Rectifier’s R
ovide simple
7sToMluLtoiognic
Level Power
to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
-56*
-56* A
-224
250 W
2.0 W/°C
±10 V
1060
mJ
-56 A
25 mJ
-3.7 V/ns
-55 to 150
°C
300 (for 5s)
3.3 (Typical)
g
1
06/11/07


IRHLNA797064 Datasheet
Recommendation IRHLNA797064 Datasheet
Part IRHLNA797064
Description (IRHLNA79x064) POWER MOSFET
Feature IRHLNA797064; www.DataSheet4U.com PD-97174A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) Pr.
Manufacture International Rectifier
Datasheet
Download IRHLNA797064 Datasheet




International Rectifier IRHLNA797064
IRHLNA797064, 2N7622U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -60 — —
V
VGS = 0V, ID = -250µA
BVDSS/TJ Temperature Coefficient of Breakdown — -0.06 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.015
VGS = -4.5V, ID = -56A Ã
VGS(th)
Gate Threshold Voltage
-1.0 — -2.0 V
VDS = VGS, ID = -250µA
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
— 4.1 — mV/°C
82 — —
S
VDS = -15V, IDS = -56A Ã
IDSS
Zero Gate Voltage Drain Current
— — -1.0
— — -10 µA
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — -100 nA
— — 100
VGS = -10V
VGS = 10V
Qg Total Gate Charge
— — 190
VGS = -4.5V, ID = -56A
Qgs Gate-to-Source Charge
— — 53 nC
VDS = -30V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 56
td(on)
Turn-On Delay Time
— — 38
VDD = -30V, ID = -56A,
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— — 265 ns
— — 210
— — 70
VGS = -6.0V, RG = 2.35
LS + LD
Total Inductance
— 4.0 — nH Measured from the center of
drain pad to center of source pad
Ciss Input Capacitance
— 10520 —
VGS = 0V, VDS = -25V
Coss
Output Capacitance
— 2780 — pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
— 310 —
Rg Gate Resistance
2.3 f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -56* A
ISM Pulse Source Current (Body Diode) À
— — -224
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -56A, VGS = 0V Ã
trr Reverse Recovery Time
— — 159 ns Tj = 25°C, IF = -56A, di/dt -100A/µs
QRR Reverse Recovery Charge
— — 430 nC
VDD -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
1.6
0.5
°C/W
Test Conditions
soldered to a 2” square copper-cladboard
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com



International Rectifier IRHLNA797064
PRraed-IirartaiodniaCtiohnaracteristics
IRHLNA797064, 2N7622U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-2)
Upto 300K Rads (Si)1
Min Max
-60 —
-1.0 -2.0
— -100
— 100
— -10
— 0.015
— 0.015
VSD Diode Forward Voltage„
1. Part numbers IRHLNA797064, IRHLNA793064
-5.0
Units
V
nA
µA
V
Test Conditions
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS= -48V, VGS=0V
VGS = -4.5V, ID = -56A
VGS = -4.5V, ID = -56A
VGS = 0V, ID = -56A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V 2V 4V 5V 6V 7V 8V 10V
Br 37
I 60
Au 82
305 39 -60 -60 -60 -60 -40 -30 -25 -20
370 34 -60 -60 -60 -40 -20
-
-
-
390 30 -60 -60 -60
-
-
-
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 3 4 5 6 7 8 9 10
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3







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