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PD - 93826D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) RDS(on) 0.07Ω 0.07Ω 0.07Ω ID 18A* 18A* 18A* 18A* QPL Part Number JANSR2N7484T3 JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL
REF: MIL-PRF-19500/702 TECHNOLOGY
5
IRHY58130CM1000K Rads (Si) 0.085Ω
TM
TO-257AA
International Rectifier’s R5 technology provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 14 72 75 0.6 ±20 87 18 7.5 1.4 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
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1
4/26/06
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 — — 2.0 13 — — — — — — — — — — — —
Typ Max Units
— 0.11 — — — — — — — — — — — — — — 6.8 — — 0.07 4.0 — 10 25 100 -100 50 7.4 20 25 100 35 30 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 14A Ã VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 14A Ã VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, I D = 18A VDS = 50V VDD = 50V, ID = 18A, VGS =12V, RG = 7.5Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1005 365 50
— — —
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
— — — — — — — — — — 18* 72 1.2 250 850
Test Conditions
A
V ns nC Tj = 25°C, IS = 18A, VGS = 0V Ã Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤ 25V Ã
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
— — — — 1.67 80
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57130CM, JANSR2N7484T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source .