POWER MOSFET. IRHY57Z30CM Datasheet

IRHY57Z30CM MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHY57Z30CM
www.DataSheet4U.com
PD-93824E
IRHY57Z30CM
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57Z30CM 100K Rads (Si) 0.03
IRHY53Z30CM 300K Rads (Si) 0.03
IRHY54Z30CM 500K Rads (Si) 0.03
IRHF58Z30CM 1000K Rads (Si) 0.035
JANSR2N7482T3
30V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID QPL Part Number
18A* JANSR2N7482T3
18A* JANSF2N7482T3
18A* JANSG2N7482T3
18A* JANSH2N7482T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18* A
72
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy Á
177
mJ
Avalanche Current À
18 A
Repetitive Avalanche Energy À
7.5 mJ
Peak Diode Recovery dv/dt Â
1.7 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/25/06


IRHY57Z30CM Datasheet
Recommendation IRHY57Z30CM Datasheet
Part IRHY57Z30CM
Description (IRHY5xZ30CM) RADIATION HARDENED POWER MOSFET
Feature IRHY57Z30CM; www.DataSheet4U.com PD-93824E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary.
Manufacture International Rectifier
Datasheet
Download IRHY57Z30CM Datasheet




International Rectifier IRHY57Z30CM
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.028 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.03
VGS = 12V, ID = 18A Ã
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
VDS = VGS, ID = 1.0mA
gfs Forward Transconductance
16 — — S ( )
VDS 15V, IDS = 18A Ã
IDSS
Zero Gate Voltage Drain Current
10
25
µA
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — 100
— — -100 nA
VGS = 20V
VGS = -20V
Qg Total Gate Charge
— — 65
VGS =12V, ID = 18A
Qgs
Gate-to-Source Charge
— — 20 nC
VDS = 15V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 10
td(on)
Turn-On Delay Time
— — 25
VDD = 15V, ID = 18A,
tr
td(off)
Rise Time
Turn-Off Delay Time
— — 100
— — 35 ns
VGS =12V, RG = 7.5
tf Fall Time
— — 30
LS + LD
Total Inductance
— 6.8 — nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 2054 —
— 936 —
— 33 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18* A
ISM Pulse Source Current (Body Diode) À
— — 72
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 102 ns
QRR Reverse Recovery Charge
— — 193 nC
Tj = 25°C, IS = 18A, VGS = 0V Ã
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 1.67
°C/W
— — 80
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2 www.irf.com



International Rectifier IRHY57Z30CM
Radiation Characteristics
IRHY57Z30CM, JANSR2N7482T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to500K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
30 —
2.0 4.0
30 —
1.5 4.0
V
— 100
— -100
— 100
nA
— -100
— 10 — 25 µA
— 0.025 — 0.03
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=24V, VGS =0V
VGS = 12V, ID =18A
RDS(on) Static Drain-to-Source Ã
— 0.03 — 0.035
On-State Resistance (TO-257AA)
VSD Diode Forward Voltage Ã
— 1.2 — 1.2 V
VGS = 12V, ID =18A
VGS = 0V, IS = 18A
1. Part numbers IRHY57Z30CM (JANSR2N7482T3), IRHY53Z30CM (JANSF2N7482T3) and IRHY54Z30CM (JANSG2N7482T3)
2. Part number IRHY58Z30CM (JANSH2N7482T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy
(MeV/(mg/cm2)) (MeV)
Cu 28
261
Br 37
285
I 60
344
Range
(µm) @VGS=0V @VGS=-5V
40 30
30
37 30
30
33 25
25
VDS (V)
@VGS=-10V
30
30
20
@VGS=-15V
25
23
15
@VGS=-20V
15
15
8
35
30
25
20
15
10
5
0
0
Cu
Br
I
-5 -10 -15
VGS
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)