Power MOSFET. IRL2203NPBF Datasheet

IRL2203NPBF MOSFET. Datasheet pdf. Equivalent


International Rectifier IRL2203NPBF
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
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PD - 94953
IRL2203NPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 7.0m
ID = 116A‡
S
TO-220AB
Max.
116‡
82
400
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.85
–––
62
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
01/29/04


IRL2203NPBF Datasheet
Recommendation IRL2203NPBF Datasheet
Part IRL2203NPBF
Description Power MOSFET
Feature IRL2203NPBF; www.DataSheet4U.com PD - 94953 IRL2203NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra .
Manufacture International Rectifier
Datasheet
Download IRL2203NPBF Datasheet




International Rectifier IRL2203NPBF
IRL2203NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
EAS Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
30 ––– ––– V
––– 0.029 ––– V/°C
–––
–––
––– 7.0
––– 10
m
1.0 ––– ––– V
73 ––– ––– S
––– ––– 25
––– ––– 250
µA
–––
–––
––– 100
––– -100
nA
––– ––– 60
––– ––– 14 nC
––– ––– 33
––– 11 –––
––– 160 –––
––– 23 –––
––– 66 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3290 –––
––– 1270 –––
––– 170 –––
––– 1320…290†
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 60A „
VGS = 4.5V, ID = 48A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A„
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
ID = 60A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
ID = 60A
RG = 1.8
VGS = 4.5V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 60A, L = 0.16mH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 116‡
––– ––– 400
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V „
––– 56 84 ns TJ = 25°C, IF = 60A
––– 110 170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD 60A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 175°C
‚ Starting TJ = 25°C, L = 0.16mH
„ Pulse width 400µs; duty cycle 2%.
RG = 25, IAS = 60A, VGS=10V (See Figure 12) … This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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International Rectifier IRL2203NPBF
IRL2203NPbF
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10 2.7V
20µs PULSE WIDTH
1 TJ= 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.7V
10
20µs PULSE WIDTH
1 TJ= 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 ID = 100A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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