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PD - 94953
IRL2203NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 30V RDS(on) = 7.0mΩ
G S
ID = 116A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
116 82 400 180 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.85 ––– 62
Units
°C/W
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1
01/29/04
IRL2203NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Min. 30 ––– ––– ––– 1.0 73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 7.0 VGS = 10V, ID = 60A mΩ 10 VGS = 4.5V, ID = 48A ––– V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 60A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 16V nA -100 VGS = -16V 60 ID = 60A 14 nC VDS = 24V 33 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 60A ––– RG = 1.8Ω ––– VGS = 4.5V, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3290 ––– VGS = 0V 1270 ––– VDS = 25V 170 ––– pF ƒ = 1.0MHz, See Fig. 5 1320
290 mJ IAS = 60A, L = 0.16mH
Typ. ––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 160 23 66
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 116 showing the A G integral reverse ––– ––– 400 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V ––– 56 84 ns TJ = 25°C, IF = 60A ––– 110 170 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25°C, L = 0.16mH
max. junction temperature. ( See fig. 11 )
ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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IRL2203NPbF
1000
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
2.7V
10
10
2.7V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 175 ° C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 ° C TJ = 175 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 100A
I D , Drain-to-Source Current (A)
2.0
1.5
100
.