Power MOSFET. IRLIZ44NPBF Datasheet

IRLIZ44NPBF MOSFET. Datasheet pdf. Equivalent


International Rectifier IRLIZ44NPBF
Logic –Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRLIZ44NPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
55V
0.022
30A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRLIZ44NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRLIZ44NPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
30
22
160
45
0.3
± 16
210
25
4.5
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
3.3
65
Units
°C/W
2017-04-27


IRLIZ44NPBF Datasheet
Recommendation IRLIZ44NPBF Datasheet
Part IRLIZ44NPBF
Description Power MOSFET
Feature IRLIZ44NPBF; .
Manufacture International Rectifier
Datasheet
Download IRLIZ44NPBF Datasheet




International Rectifier IRLIZ44NPBF
IRLIZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
C
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.022
VGS = 10V, ID = 17A
––– ––– 0.025  VGS = 5.0V, ID = 17A
––– ––– 0.035
VGS = 4.0V, ID = 14A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
21 ––– ––– S VDS = 25V, ID = 25A
––– –––
––– –––
25
250
µA
VDS = 55V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
––– ––– 48
ID = 25A
––– ––– 8.6 nC VDS = 44V
––– ––– 25
––– 11 –––
––– 84 –––
––– 26 –––
––– 15 –––
––– 4.5 –––
––– 7.5 –––
VGS = 5.0V , See Fig. 6 and 13
VDD = 28V
ns
ID = 25A
RG= 3.4VGS = 5.0V
RD= 1.1See Fig. 10
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
––– 1700 –––
VGS = 0V
––– 400
––– 150
–––
–––
pF
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
30
160
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C,IS = 17A,VGS = 0V 
trr
Reverse Recovery Time
––– 80 120 ns TJ = 25°C ,IF = 25A
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– 210 320 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD =25V, Starting TJ = 25°C, L = 470H, RG = 25, IAS = 25A (See fig. 12)
ISD 25A, di/dt 270A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRLZ44N data and test conditions.
2
2017-04-27



International Rectifier IRLIZ44NPBF
IRLIZ44NPbF
1000
100
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
100
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
2.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
10
2.5V
20µs PULSE WIDTH
1
TJ = 175°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
1
20µs PULSE WIDTH
A
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2017-04-27





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