Power MOSFET. IRLL024NQ Datasheet

IRLL024NQ MOSFET. Datasheet pdf. Equivalent


International Rectifier IRLL024NQ
www.DataSheet4U.com
PD-94152
AUTOMOTIVE MOSFET
IRLL024NQ
Typical Applications
q Electronic Fuel Injection
HEXFET® Power MOSFET
q Active Suspension
q Power Doors, Windows & Seats
q Cruise Control
q Air Bags
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
D
VDSS = 55V
RDS(on) = 0.065
G
q 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
q Dynamic dv/dt Rating
ID = 3.1A
S
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
in a SOT-223 package utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of this Automotive
qualified HEXFET Power MOSFET are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SOT-223 package is designed for surface mount and the enlarged tab
provides improved thermal characteristics making it ideal in a variety of power
applications. Power dissipation of 1.0W is possible in a typical surface mount
application. Available in Tape & Reel.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power DissipationS
Linear Derating Factor
3.1
2.6
12
1.3
8.3
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt U
±16
87
See Fig.16c, 16d, 19, 20
9.9
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
-55 to + 175
Parameter
Typ.
Max.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
03/16/01


IRLL024NQ Datasheet
Recommendation IRLL024NQ Datasheet
Part IRLL024NQ
Description Power MOSFET
Feature IRLL024NQ; www.DataSheet4U.com PD-94152 AUTOMOTIVE MOSFET Typical Applications q q q q q IRLL024NQ HEXFET® P.
Manufacture International Rectifier
Datasheet
Download IRLL024NQ Datasheet




International Rectifier IRLL024NQ
IRLL024NQ
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V
––– 0.057 ––– V/°C
––– ––– 0.065
––– ––– 0.080 m
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.1A R
VGS = 5.0V, ID = 2.5A R
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
4.5 ––– ––– S VDS = 25V, ID = 1.9A
––– ––– 25
––– ––– 250
µA
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– 11 17
ID = 1.9A
––– 1.9 ––– nC VDS = 44V
––– 4.3 –––
––– 12 –––
VGS = 10V
VDD = 28V R
––– 41 ––– ns ID = 1.9A
––– 48 –––
RG = 24
––– 39 –––
RD = 15
––– 508 –––
VGS = 0V
––– 141 ––– pF VDS = 25V
––– 62 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) Q
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
40
65
Max.
3.1
12
1.0
60
97
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.9A, VGS = 0VR
TJ = 25°C, IF = 1.9A
di/dt = 100A/µs R
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
R Pulse width 400µs; duty cycle 2%.
S Surface mounted on 1 in square Cu board
T Starting TJ = 25°C, L = 18mH
RG = 25, IAS = 3.1A. (See Figure 12).
U ISD 1.9A, di/dt 197A/µs, VDD V(BR)DSS,
TJ 175°C
VLimited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2 www.irf.com



International Rectifier IRLL024NQ
100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
1
2.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFLL024NQ
100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
1
2.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
1.0
VDS = 15V
20µs PULSE WIDTH
3.0 5.0 7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 3.1A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)