Power MOSFET. IRLZ44NS Datasheet

IRLZ44NS MOSFET. Datasheet pdf. Equivalent


International Rectifier IRLZ44NS
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ44NS)
l Low-profile through-hole (IRLZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ44NL) is available for low-
profile applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91347D
IRLZ44NS/L
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.022
ID = 47A
S
D 2 Pak
T O -26 2
Max.
47
33
160
3.8
110
0.71
±16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/11/98


IRLZ44NS Datasheet
Recommendation IRLZ44NS Datasheet
Part IRLZ44NS
Description Power MOSFET
Feature IRLZ44NS; www.DataSheet4U.com PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l .
Manufacture International Rectifier
Datasheet
Download IRLZ44NS Datasheet




International Rectifier IRLZ44NS
IRLZ44NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.022
VGS = 10V, ID = 25A „
––– ––– 0.025 VGS = 5.0V, ID = 25A „
––– ––– 0.035
VGS = 4.0V, ID = 21A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
21 ––– ––– S VDS = 25V, ID = 25A…
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg Total Gate Charge
––– ––– 48
ID = 25A
Qgs Gate-to-Source Charge
––– ––– 8.6 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 5.0V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 84 ––– ns ID = 25A
––– 26 –––
RG = 3.4Ω, VGS = 5.0V
tf Fall Time
––– 15 –––
RD = 1.1Ω, See Fig. 10 „…
LS Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss Input Capacitance
––– 1700 –––
VGS = 0V
Coss Output Capacitance
––– 400 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 47 A showing the
integral reverse
––– ––– 160
p-n junction diode.
G
D
S
––– ––– 1.3
––– 80 120
––– 210 320
V TJ = 25°C, IS = 25A, VGS = 0V „
ns TJ = 25°C, IF = 25A
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L =470µH
RG = 25, IAS = 25A. (See Figure 12)
ƒ ISD 25A, di/dt 270A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRLZ44N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.



International Rectifier IRLZ44NS
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
IRLZ44NS/L
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
1
0.1
2.5V
20µs PULSE W IDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 2.5V
20µs PULSE W IDTH
1
T J = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
20µs PU LSE W ID TH
1A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0
ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature





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