Document
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
KDS160E
SILICON EPITAXIAL PLANAR DIODE
FEATURES Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS)
VRM VR IFM IO IFSM
85 80 300 100 2
Power Dissipation
PD* 150
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
GG
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10
1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward Voltage
Reverse Current Total Capacitance
VF(1) VF(2) VF(3)
IR CT
IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz
Reverse Recovery Time
trr IF=10mA
MIN. -
TYP. 0.60 0.72 0.90
0.9 1.6
MAX. -
1.20 0.5 3.0 4.0
UNIT
V
A pF nS
2018. 04. 10
Revision No : 6
1/2
FORWARD CURRENT I F (mA)
KDS160E
10 3
10 2 10
1 10 -1 10 -2
0
IF - VF
C C
TaTa=-=2255
Ta=100 C
0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V)
1.2
REVERSE CURRENT IR (μA)
I R - VR
10
1 Ta=100 C Ta=75 C
10-1 Ta=50 C
10-2 Ta=25 C
10-3 0
20 40 60 80 REVERSE VOLTAGE VR (V)
C T - VR
2.0 f=1MHz Ta=25 C
1.6
1.2
0.8
0.4
0 0.1
0.3 1
3 10 30
REVERSE VOLTAGE VR (R)
100
REVERSE RECOVERY TIME t rr (ns)
t rr - I F
100 Ta=25 C
50 Fig. 1 30
10
5 3
1
0.5 0.1
0.3 1
3 10 30
FORWARD CURRENT IF (mA)
100
TOTAL CAPACITANCE CT (pF)
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT WAVEFORM
0
INPUT 0.01μF
DUT
-6V 50ns
E
50Ω 2kΩ 50Ω
OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω)
IF =10mA 0 IR
PULSE GENERATOR (ROUT =50Ω)
2018. 04. 10
Revision No : 6
WAVEFORM 0.1 IR
t rr
2/2
.