Silicon Diode. KDS160E Datasheet

KDS160E Diode. Datasheet pdf. Equivalent


KEC KDS160E
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
KDS160E
SILICON EPITAXIAL PLANAR DIODE
FEATURES
Small Package : ESC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
Suffix U : Qualified to AEC-Q101.
ex) KDS160E-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
VRM
VR
IFM
IO
IFSM
85
80
300
100
2
Power Dissipation
PD* 150
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward Voltage
Reverse Current
Total Capacitance
VF(1)
VF(2)
VF(3)
IR
CT
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0V, f=1MHz
Reverse Recovery Time
trr IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
A
pF
nS
2018. 04. 10
Revision No : 6
1/2


KDS160E Datasheet
Recommendation KDS160E Datasheet
Part KDS160E
Description Silicon Diode
Feature KDS160E; SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. KDS160E SILICON EPITAXIAL PLAN.
Manufacture KEC
Datasheet
Download KDS160E Datasheet




KEC KDS160E
KDS160E
10 3
10 2
10
1
10 -1
10 -2
0
IF - VF
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE VF (V)
1.2
I R - VR
10
1 Ta=100 C
Ta=75 C
10-1 Ta=50 C
10-2 Ta=25 C
10-3
0
20 40 60 80
REVERSE VOLTAGE VR (V)
C T - VR
2.0
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1
0.3 1
3 10 30
REVERSE VOLTAGE VR (R)
100
t rr - I F
100
Ta=25 C
50 Fig. 1
30
10
5
3
1
0.5
0.1
0.3 1
3 10 30
FORWARD CURRENT IF (mA)
100
Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT 0.01μF
DUT
-6V
50ns
E
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50Ω)
IF =10mA
0
IR
PULSE GENERATOR
(ROUT =50Ω)
2018. 04. 10
Revision No : 6
WAVEFORM
0.1 IR
t rr
2/2





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