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KDS160E Dataheets PDF



Part Number KDS160E
Manufacturers KEC
Logo KEC
Description Silicon Diode
Datasheet KDS160E DatasheetKDS160E Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. KDS160E SILICON EPITAXIAL PLANAR DIODE FEATURES Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) VRM VR IFM IO IFSM 85 80 300 100 2 Power Dissipati.

  KDS160E   KDS160E



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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. KDS160E SILICON EPITAXIAL PLANAR DIODE FEATURES Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) VRM VR IFM IO IFSM 85 80 300 100 2 Power Dissipation PD* 150 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. UNIT V V mA mA A mW CATHODE MARK B A GG C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC Marking Type Name UF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz Reverse Recovery Time trr IF=10mA MIN. - TYP. 0.60 0.72 0.90 0.9 1.6 MAX. - 1.20 0.5 3.0 4.0 UNIT V A pF nS 2018. 04. 10 Revision No : 6 1/2 FORWARD CURRENT I F (mA) KDS160E 10 3 10 2 10 1 10 -1 10 -2 0 IF - VF C C TaTa=-=2255 Ta=100 C 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 REVERSE CURRENT IR (μA) I R - VR 10 1 Ta=100 C Ta=75 C 10-1 Ta=50 C 10-2 Ta=25 C 10-3 0 20 40 60 80 REVERSE VOLTAGE VR (V) C T - VR 2.0 f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 REVERSE VOLTAGE VR (R) 100 REVERSE RECOVERY TIME t rr (ns) t rr - I F 100 Ta=25 C 50 Fig. 1 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 FORWARD CURRENT IF (mA) 100 TOTAL CAPACITANCE CT (pF) Fig. 1. REVERSE RECOVERY TIME(trr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01μF DUT -6V 50ns E 50Ω 2kΩ 50Ω OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) IF =10mA 0 IR PULSE GENERATOR (ROUT =50Ω) 2018. 04. 10 Revision No : 6 WAVEFORM 0.1 IR t rr 2/2 .


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