2SK3556-01S Datasheet: N-CHANNEL SILICON POWER MOSFET





2SK3556-01S N-CHANNEL SILICON POWER MOSFET Datasheet

Part Number 2SK3556-01S
Description N-CHANNEL SILICON POWER MOSFET
Manufacture Fuji Electric
Total Page 4 Pages
PDF Download Download 2SK3556-01S Datasheet PDF

Features: www.DataSheet4U.com 2SK3556-01L,S,SJ FU JI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G S eries Features High speed switching Low on-resistance No secondary breadown Lo w driving power Avalanche-proof Applic ations Switching regulators UPS (Uninte rruptible Power Supply) DC-DC converter s P4 Maximum ratings and characterist icAbsolute maximum ratings (Tc=25°C un less otherwise specified) Item Drain-so urce voltage Continuous drain current P ulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum A valanche Energy Maximum Drain-Source dV /dt Peak Diode Recovery dV/dt Max. powe r dissipation Operating and storage tem perature range Symbol V DS VDSX *5 ID I D(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV /dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ra tings 250 220 ±25 ±100 ±30 25 372 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equi valent circuit schematic Drain(D) Gate (G) Source(S) < < DSS, Tch=150°C < *1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 .

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2SK3556-01L,S,SJwww.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250 V
VDSX *5
220 V
Continuous drain current
ID
±25 A
Pulsed drain current
ID(puls]
±100
A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
25 A
Maximum Avalanche Energy
EAS *1
372 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
135
kV/µs
W
Operating and storage
temperature range
Tch
Tstg
+150
-55 to +150
°C
°C
*1 L=0.67mH, Vcc=48V *2 Tch<=150°C *3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
*4 VDS=<250V *5 VGS=-30V *6 t=60sec f=60Hz
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V VDS=0V
ID=12.5A VGS=10V
Tch=25°C
Tch=125°C
ID=12.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=72V ID=12.5A
VGS=10V
RGS=10
VCC=72V
ID=12A
VGS=10V
L=100µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
250
3.0
V
5.0 V
25 µA
250
10 100
75 100
8 16
2000 3000
nA
m
S
pF
220 330
15 30
20 30 ns
30 45
60 90
20 30
44 66 nC
14 21
16 24
25 A
1.10
1.65 V
0.45
µs
1.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.926 °C/W
62.0 °C/W
1

           






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