N-Channel MOSFET. SI9925DY Datasheet

SI9925DY MOSFET. Datasheet pdf. Equivalent


Vishay Siliconix SI9925DY
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Si9925DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.05 @ VGS = 4.5 V
0.06 @ VGS = 3.0 V
0.08 @ VGS = 2.5 V
ID (A)
5.0
4.2
3.6
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si9925DY
Si9925DY-T1 (with Tape and Reel)
D1 D1
D2 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
5.0
4.0
48
1.7
2
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70145
S-03950—Rev. N, 26-May-03
Limit
62.5
Unit
_C/W
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SI9925DY Datasheet
Recommendation SI9925DY Datasheet
Part SI9925DY
Description Dual N-Channel MOSFET
Feature SI9925DY; www.DataSheet4U.com Si9925DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY V.
Manufacture Vishay Siliconix
Datasheet
Download SI9925DY Datasheet




Vishay Siliconix SI9925DY
Si9925DY
Vishay Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 10 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 5 V
VGS = 7.2 V, ID = 5.0 A
VGS = 4.5 V, ID = 5.0 A
VGS = 3.0 V, ID = 3.9 A
VGS = 2.5 V, ID = 1 A
VDS = 10 V, ID = 5.0 A
IS =5.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 6 V, VGS = 4.5 V, ID = 5.0 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 5.0 A, di/dt = 100 A/ms
Min Typa Max Unit
0.8
30
0.025
0.038
0.041
0.050
0.062
14
0.81
"100
1
5
0.045
0.05
0.06
0.08
1.2
V
nA
mA
A
W
S
V
9 20
2 nC
2.6
1 2.9 W
14 40
13 30
35 60 ns
9 30
60 150
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Document Number: 70145
S-03950—Rev. N, 26-May-03



Vishay Siliconix SI9925DY
Si9925DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
32 VGS = 5.5, 5, 4.5, 4, 3.5 V
3V
24
32
24
16
8
0
0
0.20
2.5 V
2V
1.5 V
2468
VDS - Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
16
8
0
0
1600
Transfer Characteristics
TC = - 55_C
25_C
125_C
1234
VGS - Gate-to-Source Voltage (V)
Capacitance
5
0.16
0.12
0.08
VGS = 2.5 V
VGS = 3 V
0.04
0.00
0
VGS = 4.5 V
6 12 18 24
ID - Drain Current (A)
30
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Gate Charge
VDS = 6 V
ID = 5 A
2468
Qg - Total Gate Charge (nC)
10
Document Number: 70145
S-03950—Rev. N, 26-May-03
1200
800
Ciss
Coss
400
Crss
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
VGS = 10 V
ID = 5 A
1.2
0.8
0.4
0.0
- 50
0 50 100
TJ - Junction Temperature (_C)
150
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