Mode MOSFET. ST3413 Datasheet

ST3413 MOSFET. Datasheet pdf. Equivalent


Stanson Technology ST3413
www.DataSheet4U.com
P Channel Enhancement Mode MOSFET
-3.4A
ST3413
DESCRIPTION
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
13YA
FEATURE
z -20V/-3.4A, RDS(ON) = 95m-ohm
@VGS = -4.5V
z -20V/-2.4A, RDS(ON) = 120m-ohm
@VGS = -2.5V
z 20V/-1.7A, RDS(ON) = 145m-ohm
@VGS = -1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum DC current capability
z SOT-23-3L package design
12
1A: Part Marking Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1


ST3413 Datasheet
Recommendation ST3413 Datasheet
Part ST3413
Description P Channel Enhancement Mode MOSFET
Feature ST3413; www.DataSheet4U.com P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST3413 The ST3413 is the .
Manufacture Stanson Technology
Datasheet
Download ST3413 Datasheet




Stanson Technology ST3413
P Channel Enhancement Mode MOSFET
-3.4A
ST3413
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150 ) TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
TA=25
TA=70
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
R JA
Typical
-20
+/-12
-2.8
-2.0
-8
-1.4
0.33
0.21
150
-55/150
105
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295



Stanson Technology ST3413
P Channel Enhancement Mode MOSFET
-3.4A
ST3413
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.35
-0.8 V
Gate Leakage Current
IGSS VDS=0V,VGS=+/-12V
100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
ID(on)
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55
VDS -5V,VGS=-4.5V -6.0
-1
-5 uA
A
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(on)
gfs
VSD
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-1.5A
VDS=-5V,ID=-2.8V
IS=-1.6A,VGS=0V
0.076 0.095
0.097 0.120
0.123 0.145
6
S
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID -2.8A
VDS=-6V,VGS=0V
F=1MHz
VDD=-6V,RL=6
ID=-1A,VGEN=-4.5V
RG=6
4.8 8
1.0 nC
1.0
485
85 pF
40
10 25
13 60 nS
18 70
15 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 3







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