VNS3NV04D-E

VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance (per ch.) RON 120m Current limitation (typ) )Drain-Source clamp voltage ILIMH VCLAMP 3.5A 40V uct(s■ Linear current limitation rod■ Thermal shut down P■ Short circuit protection te■ Integrated clamp le■ Low current drawn from input pin so■ Diagnostic feedback through input pin b■ Esd protection - O■ Direct access to the gate of the power mosfet )(analog driving) roduct(s■ Compatible with standard power mosfet SO-8 Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the...