2SC6116LS Datasheet: NPN Triple Diffused Planar Silicon Transistor





2SC6116LS NPN Triple Diffused Planar Silicon Transistor Datasheet

Part Number 2SC6116LS
Description NPN Triple Diffused Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SC6116LS Datasheet PDF

Features: www.DataSheet4U.com Ordering number : E NA0579 2SC6116LS SANYO Semiconductors DATA SHEET 2SC6116LS Features • • • • NPN Triple Diffused Plan ar Silicon Transistor Color TV Horizon tal Deflection Output Applications Hig h speed. High breakdown voltage (VCBO=1 500V). High reliability (Adoption of HV P process). Adoption of MBIT process. O n-chip damper diode. Specifications Ab solute Maximum Ratings at Ta=25°C Para meter Collector-to-Base Voltage Collect or-to-Emitter Voltage Emitter-to-Base V oltage Collector Current Collector Curr ent (Pulse) Collector Dissipation Junct ion Temperature Storage Temperature Sym bol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc =25°C Conditions Ratings 1500 800 6 6 15 2.0 30 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characterist ics at Ta=25°C Parameter Collector Cut off Current Collector Cutoff Current Co llector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Volt.

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Ordering number : ENA0579
2SC6116LS
SANYO Semiconductors
DATA SHEET
2SC6116LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
VEB=4V, IC=0A
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IEC=6A
IC=2A, IB1=0.4A, IB2=--0.8A
Ratings
1500
800
6
6
15
2.0
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ
800
40
10
5.3
max
10
1.0
130
2
1.5
Unit
µA
mA
V
mA
V
V
7.5
2V
0.2 µs
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306KC TI IM TC-00000393 No. A0579-1/4

           






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