Molded IGBT. 1MBK30D-060S Datasheet

1MBK30D-060S IGBT. Datasheet pdf. Equivalent


Fuji Electric 1MBK30D-060S
www.DataSheet4U.com
1MBK30D-060S
Molded IGBT
600V / 30A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Symbol
Rating
Collector-Emitter voltage
VCES
600
Gate-Emitter voltaga
VGES
±20
Collector DC
Tc=25°C
IC25
50
current
Tc=100°C IC100
30
1ms Tc=25°C Icp
90
Max. power dissipation (IGBT)
PC
150
Max. power dissipation (FWD)
PC
80
Operating temperature
Tj
+150
Storage temperature
Tstg -40 to +150
Screw torque
- 39.2 to 58.8
Unit
V
V
A
A
A
W
W
°C
°C
N·m
Equivalent Circuit Schematic
IGBT + FWD
C:Collector
G:Gate
E:Emitter
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Min.
Typ.
Max.
Zero gate voltage collector current ICES
– – 1.0
Gate-Emitter leakage current
IGES
– – 10
Gate-Emitter threshold voltage
VGE(th)
4.0 5.0 6.0
Collector-Emitter saturation voltage VCE(sat) – 2.4 2.9
Input capacitance
Cies
– 1960
Output capacitance
Coes
– 222
Reverse transfer capacitance
Cres
– 101
Turn-on time
ton *
– 0.15 –
tr * – 0.09 –
trr2 – 0.03 –
Turn-off time
toff
– 0.50 0.62
Switching
tf – 0.10 0.17
Time
Turn-on time
ton *
– 0.15 –
tr * – 0.09 –
trr2 – 0.03 –
Turn-off time
toff
– 0.50 0.62
tf – 0.10 0.17
FWD forward on voltage VF – 2.0 2.5
Reverse recovery time
trr – 0.06 0.10
*Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
––
Max.
0.83
1.56
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=30mA
VGE=15V, IC=30A
VGE=0V
VCE=25V
f=1MHz
VCC=300V, IC=30A
VGE=±15V
RG=36 ohm
(Half Bridge)
Inductance Load
VCC=300V, IC=30A
VGE=+15V
RG=10 ohm
(Half Bridge)
Inductance Load
IF=30A, VGE=0V
IF=30A, VGE=-10V,
VR=300V, di/dt=100A/µs
Conditions
IGBT
FWD
Unit
mA
µA
V
V
pF
µs
µs
V
µs
Unit
°C/W
°C/W


1MBK30D-060S Datasheet
Recommendation 1MBK30D-060S Datasheet
Part 1MBK30D-060S
Description Molded IGBT
Feature 1MBK30D-060S; www.DataSheet4U.com 1MBK30D-060S 600V / 30A Molded Package Features · Small molded package · Low po.
Manufacture Fuji Electric
Datasheet
Download 1MBK30D-060S Datasheet




Fuji Electric 1MBK30D-060S
1MBK30D-060S
Outline drawings, mm
TO-247
Molded IGBT
Gate
Collector
Emitter
Switching waveform (Inductance load)
Mesurement circuit



Fuji Electric 1MBK30D-060S
1MBK30D-060S
Characteristics
Collector current vs. Collector-Emitter voltage
Tj=25°C
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
VCC=300V, RG=10, VGE=+15V, Tj=125°C
Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
VCC=300V, RG=36, VGE=±15V, Tj=125°C
Collector current : IC (A)
Collector current : IC (A)







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