POWER MOSFET. 2SK3531-01 Datasheet

2SK3531-01 MOSFET. Datasheet pdf. Equivalent


Fuji Electric 2SK3531-01
2SK3531-01www.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
900
Unit
V
VDSX *5
900 V
Continuous drain current
ID
±6 A
Pulsed drain current
ID(puls]
±24 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
6A
Maximum Avalanche Energy
EAS
*1
244
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
195
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V VDS=0V
ID=3A VGS=10V
Tch=25°C
Tch=125°C
ID=3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=3A
VGS=10V
RGS=10
VCC=450V
ID=6A
VGS=10V
L=12.4mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
Min.
900
3.0
3.7
6
Typ.
1.92
7.4
750
100
7
21
8
42
11
21.5
3
7
0.90
1.1
5.5
Max. Units
V
5.0 V
25 µA
250
100 nA
2.50
S
1125
pF
150
11
32 ns
12
63
16.5
32 nC
4.5
10.5
A
1.50 V
µs
µC
Min. Typ.
Max. Units
0.640 °C/W
62.0 °C/W
1


2SK3531-01 Datasheet
Recommendation 2SK3531-01 Datasheet
Part 2SK3531-01
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3531-01; www.DataSheet4U.com 2SK3531-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [m.
Manufacture Fuji Electric
Datasheet
Download 2SK3531-01 Datasheet




Fuji Electric 2SK3531-01
2SK3531-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
0
0 25 50 75 100 125 150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
8
20V
10V
8.0V
7.0V
6.5V
6 6.0V
4
2 VGS=5.5V
0
0 5 10 15 20
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.6
VGS=5.5V
6.0V
6.5V
7.0V
8.0V
2.5
10V
20V
2.4
2.3
2.2
2.1
2.0
1.9
1.8
0 2 4 6 8 10
ID [A]
1
0.1 1
ID [A]
10
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
7
6
5
4
max.
3
typ.
2
1
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
2



Fuji Electric 2SK3531-01
2SK3531-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
Ciss
100
10-1
Coss
10-2
Crss
10-3
100
101
VDS [V]
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
103
tf
102
td(off)
td(on)
101
tr
100
10-1
100
ID [A]
101
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25°C
14
12
Vcc= 180V
450V
10 720V
8
6
4
2
0
0 5 10 15 20 25 30 35
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
800
I =2A
AS
600
400 IAS=4A
I =6A
AS
200
0
0 25 50 75 100 125 150
starting Tch [°C]
3





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