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NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz
RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic
Features
Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm P1dB@2GHz High P1dB of
[email protected] Single Power Supply Operation 50 Ω I/O Matched for High Freq. Use Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
GND 4 MARKING - N5
RF IN 1
3 RF OUT
2 GND
Applications
Functional Block Diagram
Product Description
The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-500 provides flexibility and stability. The NBB-500 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-500-D) form, where its gold metallization is ideal for hybrid circuit designs.
Ordering Information
NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500 NBB-500-T1 NBB-500-D NBB-500-E NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Tape & Reel, 1000 Pieces NBB-500 Chip Form (100 pieces minimum order) Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
9
Rev A9 DS070327
GaAs HBT GaAs MESFET InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT
GaAs pHEMT Si CMOS Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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NBB-500
Absolute Maximum Ratings Parameter
RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature
Rating
+20 300 70 200 -45 to +85 -65 to +150
Unit
dBm mW mA °C °C °C Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
19.0 16.0
Specification Typ.
20.5 19.5 18.5 ±0.8 1.70:1 1.45:1 1.65:1
Max.
Unit
dB dB dB dB
Condition
VD =+3.9V, ICC =35mA, Z0 =50 Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz f=2.0GHz to 4.0GHz f=0.1GHz to 3.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz
Gain Flatness, GF Input and Output VSWR
Bandwidth, BW Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6
4.2 12.3 14.0 3.2 +26.5 -17.0 3.9 -0.0015 4.2
GHz dBm dBm dB dBm dB V dB/°C
BW3 (3dB) f=2.0GHz f=6.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 10.0GHz
MTTF versus Temperature @ ICC =35mA
Case Temperature Junction Temperature MTTF 85 120 >1,000,000 256 °C °C hours °C/W
Thermal Resistance
θJC
J T – T CASE -------------------------- = θ JC ( ° C ⁄ Watt ) V D ⋅ I CC
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
Rev A9 DS070327
NBB-500
Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this.