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NBB-500 Dataheets PDF



Part Number NBB-500
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER
Datasheet NBB-500 DatasheetNBB-500 Datasheet (PDF)

www.DataSheet4U.com NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-500 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm P1dB@2GHz High P1dB of [email protected] Single Power Supply Operation 50 Ω I/O Matched for High Freq. Use Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or D.

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www.DataSheet4U.com NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-500 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 19.0dB Gain, +12.3dBm P1dB@2GHz High P1dB of [email protected] Single Power Supply Operation 50 Ω I/O Matched for High Freq. Use Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) GND 4 MARKING - N5 RF IN 1 3 RF OUT 2 GND Applications „ Functional Block Diagram Product Description The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-500 provides flexibility and stability. The NBB-500 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-500-D) form, where its gold metallization is ideal for hybrid circuit designs. „ „ Ordering Information NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-500 NBB-500-T1 NBB-500-D NBB-500-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Tape & Reel, 1000 Pieces NBB-500 Chip Form (100 pieces minimum order) Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit Optimum Technology Matching® Applied 9 Rev A9 DS070327 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 12 NBB-500 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Rating +20 300 70 200 -45 to +85 -65 to +150 Unit dBm mW mA °C °C °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Overall Small Signal Power Gain, S21 Min. 19.0 16.0 Specification Typ. 20.5 19.5 18.5 ±0.8 1.70:1 1.45:1 1.65:1 Max. Unit dB dB dB dB Condition VD =+3.9V, ICC =35mA, Z0 =50 Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz f=2.0GHz to 4.0GHz f=0.1GHz to 3.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz Gain Flatness, GF Input and Output VSWR Bandwidth, BW Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 4.2 12.3 14.0 3.2 +26.5 -17.0 3.9 -0.0015 4.2 GHz dBm dBm dB dBm dB V dB/°C BW3 (3dB) f=2.0GHz f=6.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 10.0GHz MTTF versus Temperature @ ICC =35mA Case Temperature Junction Temperature MTTF 85 120 >1,000,000 256 °C °C hours °C/W Thermal Resistance θJC J T – T CASE -------------------------- = θ JC ( ° C ⁄ Watt ) V D ⋅ I CC 2 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A9 DS070327 NBB-500 Pin 1 Function RF IN Description RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this.


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