MMIC AMPLIFIER. NBB-502 Datasheet

NBB-502 AMPLIFIER. Datasheet pdf. Equivalent


RF Micro Devices NBB-502
www.DataSheet4U.com
NBB-502
0
RoHS Compliant & Pb-Free Product
Typical Applications
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NBB-502 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-502 provides flexibility and stability. The
NBB-502 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either 1,000 or 3,000 piece-per-reel quantities.
2.94 min
3.28 max
Pin 1
Indicator
N5
1.00 min
1.50 max
0.025 min
0.125 max
Pin 1
Indicator
RF OUT
Ground
0.50 nom
0.50 nom
Ground
RF IN
Lid ID
1.70 min
1.91 max
0.38 nom
2.39 min
2.59 max
All Dimensions in Millimeters
0.37 min
0.63 max
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
0.98 min
1.02 max
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
9InGaP/HBT
SiGe HBT
GaN HEMT
Si CMOS
SiGe Bi-CMOS
Pin 1
Indicator
123
RF OUT
Ground
894
Ground
RF IN
765
Functional Block Diagram
Rev A5 060124
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 19.0dB Gain, +13.0dBm P1dB@2GHz
• High P1dB of +14.0dBm@6.0GHz
• Single Power Supply Operation
• 50Ω I/O Matched for High Freq. Use
Ordering Information
NBB-502
Cascadable Broadband GaAs MMIC Amplifier DC to
4 GHz
NBB-502-T1
Tape & Reel, 1000 Pieces
NBB-502-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-57


NBB-502 Datasheet
Recommendation NBB-502 Datasheet
Part NBB-502
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER
Feature NBB-502; www.DataSheet4U.com NBB-502 0 RoHS Compliant & Pb-Free Product Typical Applications • Narrow and Br.
Manufacture RF Micro Devices
Datasheet
Download NBB-502 Datasheet




RF Micro Devices NBB-502
NBB-502
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20 dBm
Power Dissipation
300 mW
Device Current
70 mA
Channel Temperature
200 °C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
MTTF versus Temperature
@ ICC=35mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θJC
Specification
Min.
Typ.
Max.
19.0
16.0
3.6
20.5
19.0
17.0
±0.8
1.55:1
1.50:1
1.55:1
4.2
13.0
14.0
4.0
+23.0
-17.0
3.9
-0.0015
4.2
85
109.4
>1,000,000
179
Unit
dB
dB
dB
dB
GHz
dBm
dBm
dB
dBm
dB
V
dB/°C
Condition
VD=+3.9V, ICC=35mA, Z0=50Ω, TA=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=1.0GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
f = 2.0 GHz
f = 6.0 GHz
f = 3.0 GHz
f = 2.0 GHz
f=0.1GHz to 10.0GHz
°C
°C
hours
°C/W
-J--T----–-----T----C---A---S---E-
VD ICC
=
θJCC Watt)
4-58 Rev A5 060124



RF Micro Devices NBB-502
NBB-502
Pin Function Description
Interface Schematic
1
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
GND
Same as pin 1.
3
GND
Same as pin 1.
4
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
5
GND
Same as pin 1.
6
GND
Same as pin 1.
7
GND
Same as pin 1.
8 RF OUT RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
R = (---V----C---C-----–----V----D----E---V---I--C----E---)-
ICC
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal run-
away. Alternatively, a constant current supply circuit may be imple-
mented. Because DC is present on this pin, a DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. The supply side of the bias network should also be well
bypassed.
RF OUT
9
GND
Same as pin 1.
Rev A5 060124
4-59







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