PRE-DRIVER AMPLIFIER. RF3807 Datasheet

RF3807 AMPLIFIER. Datasheet pdf. Equivalent


RF Micro Devices RF3807
www.DataSheet4U.com
RF3807
0 GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• GaAs Pre-Driver for Basestation Amplifiers
• Class AB Operation for NMT, GSM, DCS, PCS,
• PA Stage for Commercial Wireless Infrastructure UMTS, and WLAN Transceiver Applications
Product Description
The RF3807 is a GaAs pre-driver power amplifier, specifi-
cally designed for wireless infrastructure applications.
Using a highly reliable GaAs HBT fabrication process,
this high-performance single-stage amplifier achieves
high output power over a broad frequency range. The
RF3807 also provides excellent efficiency and thermal
stability through the use of a thermally-enhanced surface-
mount plastic-slug package. Ease of integration is accom-
plished through the incorporation of an optimized evalua-
tion board design provided to achieve proper 50Ω
operation. Various evaluation boards are available to
address a broad range of wireless infrastructure applica-
tions: NMT 450MHz; GSM850; GSM900; DCS1800;
PCS1900; UMTS2100; and, WLAN2400.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VREF 1
NC 2
RFIN 3
NC 4
Bias
Circuit
PACKAGE BASE
GND
8 VBIAS
7 RFOUT/VCC
6 RFOUT/VCC
5 NC
Functional Block Diagram
0.157
0.150
0.0192
0.0138
-A-
0.004
0.002
0.196
0.189
0.050
0.244
0.230
EXPOSED
DIE FLAG
0.066
0.056
Shaded lead is pin 1.
0.126
0.088
8° MAX
0° MIN
0.099
0.061
0.035
0.016
Package Style: SOIC-8
0.0098
0.0075
Features
• Output Power>0.5W P1dB
• High Linearity
• High Power-Added Efficiency
• Thermally-Enhanced Packaging
• Broadband Platform Design Approach,
450MHz to 2500MHz
Ordering Information
RF3807
GaAs HBT Pre-Driver Amplifier
RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
RF3807PCK-413
RF3807PCK-414
RF3807PCK-415
Fully Assembled Evaluation Board, 450MHz
Fully Assembled Evaluation Board, 869MHz to 894MHz
Fully Assembled Evaluation Board, 920MHz to 960MHz
Fully Assembled Evaluation Board, 1800MHz to 1880MHz
Fully Assembled Evaluation Board, 1930MHz to 1990MHz
Fully Assembled Evaluation Board, UMTS
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 050912
4-623


RF3807 Datasheet
Recommendation RF3807 Datasheet
Part RF3807
Description GaAs HBT PRE-DRIVER AMPLIFIER
Feature RF3807; www.DataSheet4U.com RF3807 0 RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Drive.
Manufacture RF Micro Devices
Datasheet
Download RF3807 Datasheet




RF Micro Devices RF3807
RF3807
Absolute Maximum Ratings
Parameter
Supply Voltage (VCC and VBIAS)
Power Control Voltage (VREF)
DC Supply Current
Maximum Input Power
Output Load VSWR @ P1dB
Operating Ambient Temperature
Storage Temperature
Rating
9.0
9.0
250
see below
4:1
-40 to +85
-40 to +150
Unit
V
V
mA
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall - 450MHz
Frequency
P1dB
PIN, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
Specification
Min.
Typ.
Max.
420
+28.5
51.0
50.0
16.0
-21.0
-25.0
-15.0
-8.0
38.0
39.5
41.0
42.5
+29.0
53.5
52.5
16.5
-19.0
-21.0
-13.0
-6.5
40.0
42.0
43.5
44.5
480
+29.5
16
55.0
54.0
17.0
-18.5
-20.0
-11.0
-6.0
Unit Condition
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
IREF=14mA, VCC=8V, VREF=8V, VBIAS=8V,
Temp = +25°C
@ P1dB
@ P1dB
@ P1dB
@ P1dB
15 dBm/tone
17 dBm/tone
19 dBm/tone
21 dBm/tone
4-624
Rev A4 050912



RF Micro Devices RF3807
RF3807
Parameter
Overall - GSM800
Frequency
P1dB
PIN, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
Overall - GSM900
Frequency
P1dB
PIN, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
Specification
Min.
Typ.
Max.
869
+30.0
54
53
15.5
-25.0
-44.0
-33.0
-20.0
36.0
38.0
40.0
43.0
920
+30.0
54
53
16.0
-25.0
-33.0
-29.0
-10.0
41.5
42.0
41.5
40.5
+30.5
56
55
16.5
-20.0
-39.0
-18.0
-12.0
38.5
41.0
44.0
45.0
+30.5
56
55
16.5
-22.0
-30.5
-22.0
-8.5
42.5
43.0
44.0
42.0
894
+32.0
16
60
59
17.0
-18.0
-35.0
-10.0
-8.0
960
+31.0
16
58
57
17.0
-21.0
-24.5
-9.0
-7.5
Unit Condition
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
IREF=14mA, VCC=8V, VREF=8V, VBIAS=8V,
Temp = +25°C
@ P1dB
@ P1dB
@ P1dB
@ P1dB
15 dBm/tone
17 dBm/tone
19 dBm/tone
21 dBm/tone
IREF=14mA, VCC=8V, VREF=8V, VBIAS=8V,
Temp = +25°C
@ P1dB
@ P1dB
@ P1dB
@ P1dB
15 dBm/tone
17 dBm/tone
19 dBm/tone
21 dBm/tone
Rev A4 050912
4-625





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