RF3934

www.DataSheet4U.com Proposed RF3934 GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Ω Operation Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Applications „ „ Functional Block Diagram „ Product Description The RF3934 is designed for commercial infrastructure, cellular and WiMAX infrastructure and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a flanged ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. „ „ Ordering Information RF3934 GaN Wide-Band Power Amplifier Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT 9...