RF5117C

www.DataSheet4U.com RF5117C 0 Typical Applications IEEE802.11B WLAN Applications IEEE802.11G WLAN Applications 2.5GHz ISM Band Applications Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117C is designed to maintain linearity over a wide range of supply voltage and power output. 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems -A- 3.00 SQ. 0.15 C A 2 PLCS 1.00 0.85 0.80 0.65 0.05 C 1.50 TYP 2 PLCS 0.15 C B 0.05 0.01 12° MAX 2 PLCS 0.15 C B -B1.37 TYP 2 PLCS 0.15 C A -CDimensions in mm. 0.10 M C A B SEATING PLANE 2.75 SQ. 0.60 0.24 TYP 0.45 0.00 4 PLCS Shaded lead is pin 1. 0.30 0.18 1.65 SQ. 1.35 0.23 0.13 4 PLCS 0.50 0.55 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features Single 3.3V Power Supply +30dBm Saturated Output Power VCC VCC NC NC 26dB ...