POWER AMPLIFIER. RF5122 Datasheet

RF5122 AMPLIFIER. Datasheet pdf. Equivalent


RF Micro Devices RF5122
www.DataSheet4U.com
RF5122
3V TO 4.5V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm
Features
„ Single Power Supply 3.0V to
3.6 V
„ 24dB Minimum Gain
„ Input and Output Matched to
50 Ω
„ 2400MHz to 2500MHz Fre-
quency Range
„ +18dBm @ <2.5% typ EVM,
120mA @ 3.3VCC
Applications
„ IEEE802.11b/g/n WLAN
Applications
„ 2.5GHz ISM Band Applica-
tions
„ Commercial and Consumer
Systems
„ Portable Battery-Powered
Equipment
„ Spread-Spectrum and MMDS
Systems
8
RF IN 1
Input
Match
7
Interstage
Match
Output
Match
6 VC2
VREG 2
Bias Circuit
Power
Detector
5 RF OUT
34
Functional Block Diagram
Product Description
The RF5122 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WLAN applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5122 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5122 also has built-in power detector
and incorporates the input, interstage, and output matching components internally
which reduces the component count used externally and makes it easier to incorpo-
rate on any design.
Ordering Information
RF5122
3V to 4.5V, 2.4GHz to 2.5GHz Linear Power Amplifier
RF5122PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
9GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A5 DS070517
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF5122 Datasheet
Recommendation RF5122 Datasheet
Part RF5122
Description LINEAR POWER AMPLIFIER
Feature RF5122; www.DataSheet4U.com RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-.
Manufacture RF Micro Devices
Datasheet
Download RF5122 Datasheet




RF Micro Devices RF5122
RF5122
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (VREG)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture sensitivity
ESD HBM
MM
Rating
-0.5 to +5.0
-0.5 to 3.5
400
+5
-30 to +85
-40 to +150
JEDEC Level 2
450
50
Unit
VDC
V
mA
dBm
°C
°C
V
V
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Overall
Temperature=+25°C, VCC=3.3V,
VREG=2.8V pulsed at 1% to 100% duty cycle,
Frequency = 2450 MHz,
circuit per evaluation board schematic, unless
otherwise specified
Frequency
2.40
2.50
GHz IEEE802.11g
IEEE802.11n
Output Power
18
dBm At max data rate, OFDM modulation
EVM*
2.5 4 % RMS, mean
Gain
Gain Variance
24 25.5
dB At +18dBm RF POUT and 54Mbps
1.25
±dB -30°C to +85°C
Power Detector
Current
POUT = 8 dBm
POUT = 18 dBm
1.25
0.4
1.35
0.7
1.50
V
V
Operating
Quiescent
120 145 mA At +18dBm RF POUT and 54Mbps
85 mA Data rate @<3.5% EVM RMS, mean,
T=-30°C to +50°C
IREG Current
Shutdown
Power Supply
VREG1, VREG2 Input Voltage
Output VSWR
2 mA VCC=+3.3VDC
10 μA
3.0 3.3 4.5 VDC Operating Range
2.75
2.8
2.9 VDC Operating Range
10:1
Input Return Loss
-15 -10 dB
Turn-on Time**
0.5 1.0 μS Output stable to within 90% of final gain
Second Harmonic
-27 dBm Fundamental frequency is between 2400MHz
and 2500MHz; RF POUT=+18dBm. See note 2.
Notes:
*The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.
**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.
Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A5 DS070517



RF Micro Devices RF5122
RF5122
Pin Function Description
Interface Schematic
1
RF IN
RF input. Input is matched to 50Ω and DC block is provided internally.
VCC
2
VREG
Bias current control voltage for the first and second amplifier stage.
3 PDETECT Power detector which provides an output voltage proportional to the RF
output power level. May need external decoupling capacitor for stability.
May need external circuitry to bring output voltage to desired level.
4
N/C
Must be left as no connect, not grounded.
5
RF OUT
RF output. Output is matched to 50Ω and DC block is provided internally.
Input
Match
Interstage
Match
VCC2
Output
Match
RF OUT
6
7
8
Pkg
Base
VC2
VC1
VCC
GND
Voltage supply for the second amplifier stage.
Voltage supply for the first amplifier stage.
Supply voltage for the bias reference and control circuit. May be connected
with VC1 and VC2 (with a single supply voltage) as long as VCC does not
exceed +4.5VDC in this configuration.
The center metal base of the QFN package provides DC and RF ground as
well as heat sink for the amplifier.
INDEX
AREA
2.20
Package Drawing
2 PLCS
0.10 C
0.63
0.53
0.10 C
2 PLCS
0.152
REF
B
A
2.20
0.65
0.05
0.00
SEATING
PLANE
0.10
MAX
C
11..2000TYP
Dimensions in mm.
Shaded lead is pin 1.
0.31
0.21
0.28
0.18
0.10 M C A B
Rev A5 DS070517
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 12





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