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RF5125 Dataheets PDF



Part Number RF5125
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description LINEAR POWER AMPLIFIER
Datasheet RF5125 DatasheetRF5125 Datasheet (PDF)

www.DataSheet4U.com RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 VCC VC1 NC 16 NC 1 15 14 13 12 RF OUT/ VC2 Features „ Single Power Supply 3.0V to 5.0V +21dBm, <4.0%EVM, 185mA@VCC =3.3V 28dB Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +23dBm, <4%EVM, 250mA@VCC =5.0V RF IN 2 NC 11 RF OUT „ Input Match Interstage Match „ „ RF IN 3 10 RF OUT Bias Cir.

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www.DataSheet4U.com RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 VCC VC1 NC 16 NC 1 15 14 13 12 RF OUT/ VC2 Features „ Single Power Supply 3.0V to 5.0V +21dBm, <4.0%EVM, 185mA@VCC =3.3V 28dB Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +23dBm, <4%EVM, 250mA@VCC =5.0V RF IN 2 NC 11 RF OUT „ Input Match Interstage Match „ „ RF IN 3 10 RF OUT Bias Circuit NC 4 5 NC 6 VREG1 7 VREG2 Power Detector 9 NC 8 PDTECT „ „ Applications „ Functional Block Diagram IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Product Description The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a backside ground. The RF5125 is designed to maintain linearity over a wide range of supply voltage and power output. „ „ „ „ Ordering Information RF5125 RF5125PCBA-41X 3V to 5V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied 9 Rev A23 DS070515 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 12 RF5125 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture Sensitivity Rating -0.5 to +6.0 -0.5 to 3.5 600 +5 -30 to +85 -40 to +150 JEDEC Level 2 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry .


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