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RF5373

RF Micro Devices

IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER

www.DataSheet4U.com RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER Package Style: QFN, 8-Pin, 2.2mm...


RF Micro Devices

RF5373

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www.DataSheet4U.com RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm Features „ Single Power Supply 1.8V to 3.6V Very Low Current (see table for all modes) >5dBm 11g POUT @<1% and 10dBm 11g POUT @<4% POUT =19dBm Meeting Class 1 BT Gain: 28dB Typ 11b/g/BT 8 RF IN 1 VCC 7 6 N/C DET „ „ N/C 2 3 VREG 4 PDETECT N/C Bias 5 RF OUT „ „ Applications „ IEEE802.11b/g/n Driver/Amplifier General Purpose Amplification Class 1 Bluetooth Power Amplifier Driver Amplifier for TX Power Amplifier Functional Block Diagram „ „ Product Description The RF5373 is a linear driver/amplifier that meets the FCC and ETSI requirements for operation in the 2.4GHz to 2.5GHz (IEEE802.11b/g/n and BT Class 1) bands. Operating from a single 1.8V to 3.6V supply, the amplifier will easily be incorporated into WLAN designs with minimal external components. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device is provided in a 2.2mmx2.2mmx0.6mm, 8-pin, QFN with a backside ground. „ Ordering Information RF5373 RF5373PCBA-41X RF5373PCBA-410 1.8V to 3.6V IEEE802.11b/g/n and Bluetooth Driver/Amplifier Fully Assembled Evaluation Board IEEE802.11b/g 2.4GHz to 2.5GHz Operation Optimum Technology Matching® Applied 9 Rev A6 DSB070521 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Techn...




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