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RF5824 Dataheets PDF



Part Number RF5824
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description DUAL-BAND WLAN POWER AMPLIFIER MODULE
Datasheet RF5824 DatasheetRF5824 Datasheet (PDF)

www.DataSheet4U.com Preliminary 0 Typical Applications RF5824 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE • IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications Applications • Single-Chip RF Power Amplifier Module Product Description 4.00 ± 0.10 • Wireless LAN Systems • Portable Battery-Powered Equipment The RF5824 is a linear, medium-power, high-efficiency dual-band power amplifier module designed specifically for battery-operated WLAN applications such as PC cards.

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www.DataSheet4U.com Preliminary 0 Typical Applications RF5824 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE • IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications Applications • Single-Chip RF Power Amplifier Module Product Description 4.00 ± 0.10 • Wireless LAN Systems • Portable Battery-Powered Equipment The RF5824 is a linear, medium-power, high-efficiency dual-band power amplifier module designed specifically for battery-operated WLAN applications such as PC cards, mini-PCI and compact flash applications. It is also designed to meet IEEE802.11a/b/g, IEEE802.11n, FCC, and ETSI requirements for operation within the 2.4GHz to 2.5GHz and 4.90GHz to 5.85GHz bands. The device is manufactured on an advanced InGaP GaAs Heterojunction Bipolar Transistor process, and has been designed for use as the final RF amplifier in both the 2GHz and 5GHz WLAN and other spread-spectrum transmitters. The device is packaged in a QFN, 24-pin, 4mmx4mmx0.9mm plastic package with back side ground. The RF5824 operates from a single supply and will be easily incorporated into WLAN and other designs with minimal external components. Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT GaN HEMT VREGLB PDETLB 0.90 ± 0.10 4.00 ± 0.10 Shaded area indicates pin 1. -C- 0.400 ± 0.100 2.44 SEATING PLANE SCALE: NONE 2.44 0.10 M C 0.025 ± 0.020 Dimensions in mm. 0.500 TYP 0.080 C Package Style: QFN, 24-pin, 4mmx4mm GaAs MESFET Si CMOS SiGe Bi-CMOS 9InGaP/HBT n Si Bi-CMOS Features • • • • • 5GHz Integrated Output Match 11a Current 155mA Typical 11g Current 120mA Typical Gain 27dB Typical for 11a and 11g EVM 3.5% TYP for 11g and 3.5% TYP for 11a (@ POUT 11a/g=17dBm) VCC1LB NC NC 24 23 22 21 20 19 NC 1 1 Stage Bias st 2 Stage Bias Pdetect Circuit_LB nd NC 18 RFOUT/ VCC2LB RFINLB 2 Input Match Interstage Match 17 RFOUT/ VCC2LB GND 3 16 GND • Single Supply Voltage 2.8V to 4.0V GND 4 15 RFOUTHB RFINHB 5 Input Match Interstage Match Interstage Match Output Match 14 RFOUTHB Ordering Information RF5824 3.3V, Dual-Band WLAN Power Amplifier Module RF5824PCBA-41X Fully Assembled Evaluation Board VREGHB 6 1 , 2 , and 3 Stage Bias st nd rd Pdetect Circuit_HB 13 VCC3HB 7 VCC1HB 8 GND 9 VCC2HB 10 NC 11 NC 12 PDETHB Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 061002 8-1 RF5824 Preliminary Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. 8-2 Rev A0 061002 .


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