SCHOTTKY RECTIFIER. 30BQ100G Datasheet

30BQ100G RECTIFIER. Datasheet pdf. Equivalent

Part 30BQ100G
Description SCHOTTKY RECTIFIER
Feature www.DataSheet4U.com Final PD-20805 rev. A 01/07 30BQ100G SCHOTTKY RECTIFIER 3 Amp IF(AV) = 3.0Amp.
Manufacture International Rectifier
Datasheet
Download 30BQ100G Datasheet

www.DataSheet4U.com Final PD-20805 rev. A 01/07 30BQ100G S 30BQ100G Datasheet
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30BQ100G
www.DataSheet4U.com
Final PD-20805 rev. A 01/07
SCHOTTKY RECTIFIER
30BQ100G
3 Amp
IF(AV) = 3.0Amp
VR = 100V
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV)
Rectangular
waveform
VRRM
3.0 A
100 V
IFSM @ t p= 5 μs sine
800
VF @3.0Apk,TJ=125°C
0.62
TJ range
- 55 to 175
A
V
°C
Description/ Features
The 30BQ100G surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
www.irf.com
SMC
1



30BQ100G
30BQ100G
Bulletin PD-20805 rev. A 01/07
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
30BQ100G
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
EAS Non Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
30BQ
3.0
4.0
800
70
3.0
0.5
Units Conditions
A 50% duty cycle @ TL = 148 °C, rectangular wave form
50% duty cycle @ TL = 138 °C, rectangular wave form
A 5μs Sine or 3μs Rect. pulse
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
mJ TJ = 25 °C, IAS = 1.0A, 18 μs square pulse
A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
30BQ Units Conditions
VFM Max. Forward Voltage Drop (1)
IRM Max. Reverse Leakage Current (1)
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
0.79
0.90
0.62
0.70
0.1
5.0
115
3.0
10000
Thermal-Mechanical Specifications
V @ 3A
V @ 6A
V @ 3A
V @ 6A
TJ = 25 °C
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle < 2%
Parameters
30BQ Units
Conditions
TJ Max.JunctionTemperatureRange (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL
Max. Thermal Resistance
Junction to Lead
12
(**)
°C/W
RthJA Max. Thermal Resistance
Junction to Ambient
46 °C/W
DC operation
DC operation
wt Approximate Weight
0.24(0.008) g (oz.)
Case Style
SMC
Similar to DO-214AB
Device Marking
IR3JG
(*)
dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2 www.irf.com





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