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Module U-Series. 6MBI75UA-120 Datasheet |
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6MBI75UA-120www.DataSheet4U.com
IGBT Module U-Series 1200V / 75A 6 in one-package
Features
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
Rating
1200
±20
100
75
200
150
75
150
390
+150
-40 to +125
2500
Unit
V
V
A
W
°C
VAC
Screw Torque
between thermistor and others *2
Mounting *3
-
3.5 N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=9.1 Ω
VGE=0V
IF=75A
IF=75A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
T=100°C
T=25/50°C
Min.
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
465
3305
Typ.
–
–
6.5
2.05
2.30
1.75
2.00
8
0.25
0.12
0.03
0.36
0.07
2.10
2.30
1.80
2.00
–
4.1
5000
495
3375
Max.
1.0
200
8.5
2.40
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.50
–
2.20
–
0.35
–
–
520
3450
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.05
Max.
0.32
0.73
–
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound
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6MBI75UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
VGE=20V 15V
12V
150
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C/ chip
200
VGE=20V 15V
12V
150
100
10V
50
0
0
8V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
T j=25°C T j=125°C
150
100
50
0
0 12 3
Collector-Emitter voltage : VCE [V]
4
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
100
50
0
0
10V
8V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=150A
2 Ic=75A
Ic= 37.5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25°C
Cies
10.0
VGE
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
100 200 300
Gate charge : Qg [ nC ]
400
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6MBI75UA-120
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C
toff
ton
tr
100
tf
IGBT Module
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125°C
t off
tr
ton
100 tf
10
0
50 100 150
Collector current : Ic [ A ]
200
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C
1000
100
toff
ton
tr
tf
10
1
10 100
Gate resistance : Rg [ Ω ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C
Eon
20
10
0
50 100 150
Collector current : Ic [ A ]
200
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω
20
15
10
5
0
0
Eoff(125°C)
Eon(125°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Err(25°C)
50 100 150
Collector current : Ic [ A ]
200
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
200
150
Eoff
10
Err
0
1 10 100 1000
Gate resistance : Rg [ Ω ]
100
50
0
0 400 800 1200
Collector - Emitter voltage : VCE [ V ]
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