2SJ687 Datasheet PDF Download, NEC





(PDF) 2SJ687 Datasheet Download

Part Number 2SJ687
Description MOS FIELD EFFECT TRANSISTOR
Manufacture NEC
Total Page 8 Pages
PDF Download Download 2SJ687 Datasheet PDF

Features: www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven b y a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = − 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) 2.5 V drive available • Avalanche c apability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK- E2-AY Note Note LEAD PLATING Pure Sn ( Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-f ree (This product does not contain Pb i n external electrode.) ABSOLUTE MAXIMU M RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Volt age (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ( TO-252) −20 m12 m20 m60 36 1.0 150 55 to +150 −20 40 V V A A W W °C °C A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg To.

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 3.0 V, ID = 10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = 2.5 V, ID = 10 A)
2.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SJ687-ZK-E1-AY Note
2SJ687-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
0.27 g TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
20
m12
m20
m60
36
1.0
150
55 to +150
20
40
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 12 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007

                    
  






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