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ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B
GI127
Features
PNP EPITAXIAL PLANAR T RANSISTOR
...
www.DataSheet4U.com
ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B
GI127
Features
PNP EPITAXIAL PLANAR T RANSISTOR
Description
The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation(Tc=25
)
Symbol Tj Tstg BVCBO BVCEO BVEBO IC PD
Ratings +150 -55 ~ +150 -100 -100 -5 -5 20
ambient temperature unless otherwise specified)
Unit
V V V A W
Electrical Characteristics (Rating at 25
Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -100 -100 -5 1 1 Typ. -
Max. -10 -10 -2 -2 -4 -4 -2.8 300
Unit V V V A A mA V V V V K K pF
Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 IE=-1mA, IC=0 VCB=-100V, IE=0 VCE=-100V, VBE(off)=-1.5V VEB=-5V, IC=0 IC=-3A, IB=-12mA IC=-5A, IB=-20mA IC=-5A, IB=-50mA VCE=-3V, IC=-3A VCE=-3V, IC=-500mA VCE=-3V, IC=-3A VCB=-10V, f=0.1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
GI127
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ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B
Characteristics Curve
Important Notice: A...