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ISSUED DATE :2005/07/25 REVISED DATE :
GI1386
Description Features
PNP EPITAXIAL SILICON TRANSISTO...
www.DataSheet4U.com
ISSUED DATE :2005/07/25 REVISED DATE :
GI1386
Description Features
PNP EPITAXIAL SILICON
TRANSISTOR
The GI1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics
Package Dimensions
TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current *Collector Current (Pulse) Total Power Dissipation (TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -30 -20 -6 -5 -10 20 Unit
V V V A A W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -30 -20 -6 82 Typ. 120 60
)
Max. -500 -500 -1 580 Unit V V V nA nA V MHz pF Test Conditions IC=-50uA , IE=0 IC=-1mA, IB=0 IE=-50uA ,IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE
Rank Range P 82 - 180 Q 120 - 270
R 180 - 390
E 370 - 580
GI1386
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ISSUED DATE :2005/07/25 REVISED DATE :
Characteristics Curve
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