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GI31C

GTM

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GI31C Description Features NP N EP ITAXI AL PL ANAR T RANSI...


GTM

GI31C

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Description
www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GI31C Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The GI31C is designed for use in general purpose amplifier and switching applications. *Complementary to GI32C Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO 100 VCEO 100 VEBO 5 IC 3 IC 5 Tj +150 TsTG -55 ~ +150 PD 2 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT 100 100 5 25 10 3 - 20 50 1 1.2 1.8 50 - V V V uA uA mA V V MHz IC=1mA, IE=0 IC=30mA, IB=0 IE=100uA, IC=0 VCE=100V, VEB=0V VCE=60V, IB=0 VEB=5V, IC=0 IC =3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% GI31C Page: 1/2 ISSUED DATE :2005/05/12 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of...




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