N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE PO...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 11m 55A
Description
The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side switch in SMPS and general purpose applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Features
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 30 ±12 55 39 120 63 0.42 -55 ~ +175
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.4 50 Unit /W /W
GI494
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ISSUED DATE :2006/12/07 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
D...
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