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GI5103 Dataheets PDF



Part Number GI5103
Manufacturers GTM
Logo GTM
Description NPN HIGH SPEED SWITCHING TRANSISTOR
Datasheet GI5103 DatasheetGI5103 Datasheet (PDF)

www.DataSheet4U.com ISSUED DATE :2005/10/03 REVISED DATE : GI5103 Description Features NPN HIGH SPEED SWITCHING TRANSISTOR The GI5103 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at IC=3A Wide SOA Complements to GI1952 Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min..

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www.DataSheet4U.com ISSUED DATE :2005/10/03 REVISED DATE : GI5103 Description Features NPN HIGH SPEED SWITCHING TRANSISTOR The GI5103 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at IC=3A Wide SOA Complements to GI1952 Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=100ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 100 60 5 5 10 1 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. 100 60 5 120 40 Typ. 0.15 210 80 unless otherwise noted) Max. 10 10 0.3 0.5 1.2 1.5 270 Unit V V V uA uA V V V V Test Conditions IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.15A IC=4A, IB=0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCE=2V, IC=1A VCE=2V, IC=3A VCB=10V, IE=-0.5A, f=30MHz VCE=10V, IE=0, f=1MHz MHz pF GI5103 Page: 1/3 ISSUED DATE :2005/10/03 REVISED DATE : ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) - 0.1 0.3 1.5 0.3 uS IC=3A , RL=10 IB1=-IB2=0.15A VCC 30V *Measure using pulse current Switching Time Test Circuit Characteristics Curve GI5103 Page: 2/3 ISSUED DATE :2005/10/03 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI5103 Page: 3/3 .


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