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GI965

GTM CORPORATION

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GI965 Description NP N E PITAX I AL PL ANAR T RANSI STOR T...



GI965

GTM CORPORATION


Octopart Stock #: O-599647

Findchips Stock #: 599647-F

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Description
www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GI965 Description NP N E PITAX I AL PL ANAR T RANSI STOR The GI965 is designed for use as AF output amplifier and flash unit. Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO 40 VCEO 20 VEBO 7 IC 5 ICP 8 Tj +150 TsTG -55 ~ +150 PD 2 ) Unit Test Conditions Unit V V V A A W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob 40 20 7 230 150 - 350 150 - 100 100 1000 800 50 V V V nA nA mV MHz pF IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V lC=3A, IB=100mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE1 Rank Range Q 230 ~ 380 R 340 ~ 600 S 560 ~ 800 GI965 Page: 1/2 ISSUED DATE :2005/05/12 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to mak...




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