GI9915

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/21 REVISED DATE : GI9915 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50m 20A The GI9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Single Drive Requirement Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 20 16 41 26 0.2 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4.8 110 Unit /W /W GI9915 Page: 1/5 ISSUED DATE :2005/02/21 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50 Max. 1.2 ±100 1 25 50 80 pF ns nC U...