www.DataSheet4U.com
ISSUED DATE :2005/06/07 REVISED DATE :
GI1202
Description Features
PNP EPITAXIAL PLANAR SILICON TR...
www.DataSheet4U.com
ISSUED DATE :2005/06/07 REVISED DATE :
GI1202
Description Features
PNP EPITAXIAL PLANAR SILICON
TRANSISTOR
The GI1202 is designed for voltage
regulators, relay drivers, lamp drivers and electrical equipment applications. *Large current capacitance and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Junction Temperature Storage Temperature Total Power Dissipation
,unless otherwise specified) Symbol Ratings VCBO -60 VCEO -50 VEBO -6 IC -3 ICP -6 Tj +150 TsTG -55 ~ +150 PD 1 15 PD(TC=25 )
) Unit Test Conditions
Unit V V V A A W W
Electrical Characteristics (Rating at Ta=25
Symbol Min. Typ. Max.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(sat) *hFE1 *hFE2 fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time)
-60 -50 -6 100 35 -
-0.35 -0.94 150 39 70 450 35
-1 -1 -0.7 -1.2 560 -
V V V uA uA V V MHz pF ns ns ns
IC=-10uA, IE=0 IC=-1mA, RBE= IE=-10uA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 lC=-2A, IB=-100mA lC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-3A VCE=-10V, IC=-50mA VCB=-10V, f=1MHz See specified test circuit. See specified ...