SSR10C30

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com World’s First Silicon Carbide SSR10C30 Series DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR10C 30 │ │ │ │ │ │ │ │ └ S.5 TX │ │ └ Screening __ = Not Screened │ │ TV = TX Level │ │ TXV= TXV Level │ │ S = S Level │ └ Package 2/ S.5 = SMD.5 │ G = Cerpack └Configuration 10A / 300V Schottky Silicon Carbide Features: World's 1st Hermetic 10A SiC High Voltage 300V Very High Operating Temperature, 250ºC No Recovery Time (tfr or trr) High Current Operation, 10A Hermetic Packaging TX, TXV, S Level screening available Voltage 20 = 200 V 30 = 300 V Maximum Ratings Symbol Value Units Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO) Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Cerpack (G) SSR10C20 SSR10C30 VRRM VRSM Io IFSM PD Top & Tstg RθJC 200 300 10 18 15 -55 to +250 4.4 Volts Amps Amps Watts ºC ºC/W 1 SMD .5 (S.5) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0032B DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-785...