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Silicon Carbide. SSR10C20 Datasheet

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Silicon Carbide. SSR10C20 Datasheet






SSR10C20 Carbide. Datasheet pdf. Equivalent




SSR10C20 Carbide. Datasheet pdf. Equivalent





Part

SSR10C20

Description

(SSR10C20 / SSR10C30) Schottky Silicon Carbide



Feature


www.DataSheet4U.com Solid State Devices , Inc. 14830 Valley View Blvd * La Mira da, Ca 90638 Phone: (562) 404-7855 * Fa x: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Si licon Carbide SSR10C30 Series DESIGNER ’S DATA SHEET Part Number / Ordering Information 1/ SSR10C 30 │ │ │ │ │ │ │ └ S.5 TX │ │ Screening __ = Not Screened │ │ TV = TX Lev.
Manufacture

SSDI

Datasheet
Download SSR10C20 Datasheet


SSDI SSR10C20

SSR10C20; el │ │ TXV= TXV Level │ │ S = S Level │ └ Package 2/ S.5 = SMD.5 G = Cerpack └Configuration 10A / 3 00V Schottky Silicon Carbide Features: • • • • • • • World's 1s t Hermetic 10A SiC High Voltage 300V Ve ry High Operating Temperature, 250ºC N o Recovery Time (tfr or trr) High Curre nt Operation, 10A Hermetic Packaging TX , TXV, S Level screening available Voltage 20 = .


SSDI SSR10C20

200 V 30 = 300 V Maximum Ratings Symbo l Value Units Peak Repetitive and Pe ak Surge Reverse Voltage Average Rectif ied Forward Current (Resistive Load, 60 Hz Sine Wave) Non Repetitive Peak Surg e Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO) Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Ce rpack (G) SSR10C2.


SSDI SSR10C20

0 SSR10C30 VRRM VRSM Io IFSM PD Top & T stg RθJC 200 300 10 18 15 -55 to +250 4.4 Volts Amps Amps Watts ºC ºC/W 1 SMD .5 (S.5) NOTE: All specificatio ns are subject to change without notifi cation. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0032B DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 .

Part

SSR10C20

Description

(SSR10C20 / SSR10C30) Schottky Silicon Carbide



Feature


www.DataSheet4U.com Solid State Devices , Inc. 14830 Valley View Blvd * La Mira da, Ca 90638 Phone: (562) 404-7855 * Fa x: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Si licon Carbide SSR10C30 Series DESIGNER ’S DATA SHEET Part Number / Ordering Information 1/ SSR10C 30 │ │ │ │ │ │ │ └ S.5 TX │ │ Screening __ = Not Screened │ │ TV = TX Lev.
Manufacture

SSDI

Datasheet
Download SSR10C20 Datasheet




 SSR10C20
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SSR10C 30 S.5 TX
│ │ │ └ Screening __ = Not Screened
││ │
TV = TX Level
││ │
TXV= TXV Level
││ │
S = S Level
│ │ └ Package 2/ S.5 = SMD.5
││
G = Cerpack
│ └Configuration
Voltage 20 = 200 V
30 = 300 V
World’s First Silicon Carbide
SSR10C30 Series
10A / 300V
Schottky Silicon Carbide
Features:
World's 1st Hermetic 10A SiC
High Voltage 300V
Very High Operating Temperature, 250ºC
No Recovery Time (tfr or trr)
High Current Operation, 10A
Hermetic Packaging
TX, TXV, S Level screening available
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO)
Power Dissipation
SSR10C20
SSR10C30
Symbol
VRRM
VRSM
Io
IFSM
PD
Value
200
300
10
18
15
Units
Volts
Amps
Amps
Watts
Operating & Storage Temperature
Top & Tstg
-55 to +250
ºC
Maximum Thermal Resistance
Junction to Case
1
Cerpack (G)
RθJC
SMD .5 (S.5)
4.4 ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032B
DOC




 SSR10C20
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
World’s First Silicon Carbide
SSR10C30 Series
Electrical Characteristic
Instantaneous Forward Voltage Drop
(Tj = 25ºC, 300 µsec pulse)
Instantaneous Forward Voltage Drop
(Tj = 150ºC, 300 µsec pulse)
Instantaneous Forward Voltage Drop
(Tj = -55ºC, 300 µsec pulse)
Reverse Leakage Current
(Vr = Rated Vr, Tj = 25ºC, 300 µsec min pulse)
Reverse Leakage Current
(Vr = Rated Vr, Tj = 150ºC, 300 µsec min pulse)
Junction Capacitance
(Vr=10 Vdc, Tc=25ºC, f=1MHz)
Total Capacitive Charge
(VR = 400V, IF = 5A, di/dt = 200A/µs, TJ = 150ºC)
Symbol
If = 5A
If = 10A
If = 5A
If = 10A
If = 5A
If = 10A
Vf1
Vf2
Vf3
Vf4
Vf5
Vf6
Ir1
Ir2
Cj
Qc
Min
---
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---
---
---
---
---
---
---
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Typ
1.20
1.50
1.18
1.65
1.35
1.60
25
100
350
13
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
4/ If High Temperature Operation is Desired (> 175oC) Consult Factory for Soldering Consideration.
Max Units
1.32
1.65
Volts
1.28
1.85
Volts
1.45
1.75
Volts
100 µA
250 µA
500 pF
--- nC
Available Part Numbers:
SSR10C20S.5 SSR10C20G
SSR10C30S.5 SSR10C30G
Package
SMD .5 (S.5)
Cerpack (G)
PIN ASSIGNMENT
Pin 1
Pin 2
Cathode Anode
Anode
Anode
Pin 3 (Tab)
Anode
Cathode










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