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POWER MOSFET. SSR1N50A Datasheet

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POWER MOSFET. SSR1N50A Datasheet






SSR1N50A MOSFET. Datasheet pdf. Equivalent




SSR1N50A MOSFET. Datasheet pdf. Equivalent





Part

SSR1N50A

Description

N-CHANNEL POWER MOSFET



Feature


www.DataSheet4U.com Advanced Power MOSF ET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Inp ut Capacitance Improved Gate Charge Ext ended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V L ower RDS(ON) : 4.046 Ω (Typ.) SSR/U1 N50A BVDSS = 500 V RDS(on) = 5.5 Ω ID = 1.3 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Sourc.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSR1N50A Datasheet


Fairchild Semiconductor SSR1N50A

SSR1N50A; e Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Charact eristic Drain-to-Source Voltage Continu ous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Curren t-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Curre nt Repetitive Avalanche Energy Peak Dio de Recovery dv/dt Total Power Dissipati on (TA=25 C ) * Ο .


Fairchild Semiconductor SSR1N50A

Ο Ο Value 500 1.3 0.82 1 O Units V A A V mJ A mJ V/ns W W W/ C Ο 5 + _ 30 113 1.3 2.6 3.5 2.5 26 0.21 - 55 to +1 50 O 1 O 1 O 3 O 2 Total Power Dissip ation (TC=25 C ) Ο Linear Derating Fa ctor TJ , TSTG TL Operating Junction an d Storage Temperature Range Maximum Lea d Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Th ermal Resistance Symbol R.


Fairchild Semiconductor SSR1N50A

θJC R θJA R θJA Characteristic Junct ion-to-Case Junction-to-Ambient * Junct ion-to-Ambient Typ. ---Max. 4.76 50 110 Ο Units C/W * When mounted on the m inimum pad size recommended (PCB Mount) . Rev. B ©1999 Fairchild Semiconducto r Corporation SSR/U1N50A Ο N-CHANNEL POWER MOSFET Electrical Characteristi cs (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ .

Part

SSR1N50A

Description

N-CHANNEL POWER MOSFET



Feature


www.DataSheet4U.com Advanced Power MOSF ET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Inp ut Capacitance Improved Gate Charge Ext ended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V L ower RDS(ON) : 4.046 Ω (Typ.) SSR/U1 N50A BVDSS = 500 V RDS(on) = 5.5 Ω ID = 1.3 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Sourc.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSR1N50A Datasheet




 SSR1N50A
www.DataSheet4U.com
Advanced Power MOSFET
SSR/U1N50A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 500V
Lower RDS(ON) : 4.046 (Typ.)
BVDSS = 500 V
RDS(on) = 5.5
ID = 1.3 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
500
1.3
0.82
5
+_ 30
113
1.3
2.6
3.5
2.5
26
0.21
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.76
50
110
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation




 SSR1N50A
SSR/U1N50A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
500 -- -- V
-- 0.63 -- V/ΟC
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µ A
VGS=0V,ID=250 µA
ID=250 µA See Fig 7
VDS=5V,ID=250 µ A
VGS=30V
VGS=-30V
VDS=500V
VDS=400V,TC=125 ΟC
Static Drain-Source
On-State Resistance
-- -- 5.5 VGS=10V,ID=0.65A O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.04 --
VDS=50V,ID=0.65A
O4
-- 220 290
--
30
35
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 11 13
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 12 35
-- 13 35
VDD=250V,ID=1.5A,
-- 42 90 ns RG=24
See Fig 13
-- 15 40
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 11 16
VDS=400V,VGS=10V,
-- 1.6 -- nC ID=1.5A
-- 5.5 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 1.3
Integral reverse pn-diode
A
-- 5
in the MOSFET
O4 -- -- 1.15 V TJ=25ΟC,IS=1.3A,VGS=0V
-- 162 --
-- 0.54 --
ns TJ=25ΟC,IF=1.5A
µ C diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=120mH, IAS=1.3A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD <_ 1.5A, di/dt <_70A/µs, VDD<_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature




 SSR1N50A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
100
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
15
10 VGS = 10 V
SSR/U1N50A
Fig 2. Transfer Characteristics
100
150 oC
10-1
25 oC
10-2
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
100
5
VGS = 20 V
@ Note : TJ = 25 oC
0
012345
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
400
300
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
200
C oss
100
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 100 V
10
VDS = 250 V
VDS = 400 V
5
@ Notes : ID = 1.5 A
0
0 2 4 6 8 10 12
QG , Total Gate Charge [nC]






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