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SILICON TRANSISTOR. GISD1803 Datasheet

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SILICON TRANSISTOR. GISD1803 Datasheet






GISD1803 TRANSISTOR. Datasheet pdf. Equivalent




GISD1803 TRANSISTOR. Datasheet pdf. Equivalent





Part

GISD1803

Description

NPN EPITAXIAL PLANAR SILICON TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/01 /13 REVISED DATE : GISD1803 Descriptio n Features NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1803 a pplies to relay drivers, high-speed inv erters, converters, and other general h igh-current switching applications. *L ow collector-to-emitter saturation volt age. *High current and high f T *Excel lent linearity of .
Manufacture

GTM

Datasheet
Download GISD1803 Datasheet


GTM GISD1803

GISD1803; hFE *Fast switching time Package Dimens ions TO-251 REF. A B C D E F Millimet er Min. Max. 6.40 6.80 5.20 5.50 6.80 7 .20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.9 0 1.50 5.40 5.80 Absolute Maximum Rati ngs Parameter Junction Temperature Stor age Temperature Collector to Base Volta ge Collector to Em.


GTM GISD1803

itter Voltage Emitter to Base Voltage Co llector Current(DC) Collector Current(P ulse) Collector Dissipation (Ta = 25 S ymbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 , unless otherwise specified) Ra tings +150 -55 ~ +150 60 50 6 5 8 1 20 V V V A A W W Unit Electrical Characte ristics (Ta = 25 Symbol V(BR)CBO V(BR)C EO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton .


GTM GISD1803

tstg tf Cob Min. 60 50 6 70 35 Typ. 0.22 0.95 180 50 500 20 40 unless otherwis e specified) Max. 1 1 0.4 1.3 400 MHZ n s ns ns pF Unit V V V uA uA V V IC=10uA , IE =0 IC=1mA, RBE= IE=10uA, IC=0 VCB= 40V, IE =0 VEB=4V, IC=0 IC=3A, IB=0.15A IC=3A, IB=0.15A VCE=2V, IC=0.5A VCE=2V , IC=4A VCE=5V,IC=1A See test circuit S ee test circuit See test circuit VCB=10 V, f=1MHz Test Con.

Part

GISD1803

Description

NPN EPITAXIAL PLANAR SILICON TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/01 /13 REVISED DATE : GISD1803 Descriptio n Features NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1803 a pplies to relay drivers, high-speed inv erters, converters, and other general h igh-current switching applications. *L ow collector-to-emitter saturation volt age. *High current and high f T *Excel lent linearity of .
Manufacture

GTM

Datasheet
Download GISD1803 Datasheet




 GISD1803
www.DataSheet4U.com
ISSUED DATE :2005/01/13
REVISED DATE :
GISD1803
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
*Low collector-to-emitter saturation voltage.
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
5
Collector Current(Pulse)
ICP
8
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.22
VBE(sat)
- 0.95
hFE1
70 -
hFE2
35 -
fT - 180
ton - 50
tstg - 500
tf - 20
Cob - 40
unless otherwise specified)
Max.
Unit
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 uA VCB=40V, IE=0
1 uA VEB=4V, IC=0
0.4 V IC=3A, IB=0.15A
1.3 V IC=3A, IB=0.15A
400 VCE=2V, IC=0.5A
- VCE=2V, IC=4A
-
MHZ
VCE=5V,IC=1A
- ns See test circuit
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
Test Conditions
GISD1803
Page: 1/3




 GISD1803
Classification Of hFE1
Rank
Q
Range
70 ~ 140
Switching Time Test Circuit
R
100 ~ 200
ISSUED DATE :2005/01/13
REVISED DATE :
S
140 ~ 280
T
200 ~ 400
Characteristics Curve
GISD1803
Page: 2/3




 GISD1803
ISSUED DATE :2005/01/13
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GISD1803
Page: 3/3






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