GISD1803

www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1803 Description Features NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. *Low collector-to-emitter saturation voltage. *High current and high f T *Excellent linearity of hFE *Fast switching time Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 , unless otherwise specified) Ratings +150 -55 ~ +150 60 50 6 5 8 1 20 V V V A A W W Unit Electrical Characteristics (Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf Cob Min. 60 50 6 70 35 Typ. 0.22 0.95 180 50 500 20 40 unless otherwise specified) Max. 1 1 0.4 1.3 400 MHZ ns ns ns pF Unit V V V uA uA V V IC=10uA, IE =0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE =0 VEB=4V, IC=0 IC=3A, IB=0.15A IC=3A, IB=0.15A VCE=2V, IC=0.5A VCE=2V, IC=4A VCE=5V,IC=1A See test circuit See test circuit See test circuit VCB=10V, f=1MHz Test Conditions GISD1803 P...