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POWER MOSFET. GJ01L60 Datasheet

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POWER MOSFET. GJ01L60 Datasheet






GJ01L60 MOSFET. Datasheet pdf. Equivalent




GJ01L60 MOSFET. Datasheet pdf. Equivalent





Part

GJ01L60

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/19 REVISED DA TE : GJ01L60 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A Description The GJ01L60 (TO-252 ) is universally preferred for all comm ercial-industrial surface mount applica tions and suited for AC/DC converters. Features *Repetitive Avalanche Rated *Simple Drive Requ.
Manufacture

GTM

Datasheet
Download GJ01L60 Datasheet


GTM GJ01L60

GJ01L60; irement *Fast Switching Speed *RoHS Comp liant Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.4 0 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2. 30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.7 0 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum R atings Parameter Drain-Source Voltage G ate-Source Voltage.


GTM GJ01L60

Continuous Drain Current, VGS@10V Conti nuous Drain Current, VGS@10V Pulsed Dra in Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±30 1 0.8 3 29 0.232 0.5 1 0.5 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Tota l Power Dissipation Linear Derating Fac tor Single Pulse Avalanche Energy Avala nche Current Repetitive Avalanche Energ y Operating Junctio.


GTM GJ01L60

n and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter T hermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 4.3 110 Unit /W /W GJ01L60 Page: 1/4 ISSUED DATE :2005/08/19 REVISED DATE : Elect rical Characteristics (Tj = 25 Paramete r Drain-Source Breakdown Voltage Breakd own Voltage Temper.

Part

GJ01L60

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/19 REVISED DA TE : GJ01L60 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A Description The GJ01L60 (TO-252 ) is universally preferred for all comm ercial-industrial surface mount applica tions and suited for AC/DC converters. Features *Repetitive Avalanche Rated *Simple Drive Requ.
Manufacture

GTM

Datasheet
Download GJ01L60 Datasheet




 GJ01L60
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/19
REVISED DATE :
GJ01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
12
1A
Description
The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
EAS
IAR
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
600
±30
1
0.8
3
29
0.232
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
4.3
110
Unit
/W
/W
GJ01L60
Page: 1/4




 GJ01L60
ISSUED DATE :2005/08/19
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
600
-
2.0
-
-
- - V VGS=0, ID=1mA
0.8 - V/ Reference to 25 , ID=1mA
- 4.0 V VDS=VGS, ID=250uA
0.8 -
S VDS=10V, ID=0.5A
- ±100 nA VGS= ±30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=600V, VGS=0
- 100 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
- 12
VGS=10V, ID=0.5A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 4.0 -
ID=1A
Qgs - 1.0 - nC VDS=480V
Qgd - 1.1 -
VGS=10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 6.6 -
- 5.0 -
- 11.7 -
- 9.2 -
VDD=300V
ID=1A
ns VGS=10V
RG=3.3
RD=300
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 170 -
- 30.7 -
- 5.1 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1
5
Unit Test Conditions
V IS=1A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1.0mH, RG=25 , IAS=1.0A.
3. Pulse width 300us, duty cycle 2%.
GJ01L60
Page: 2/4




 GJ01L60
Characteristics Curve
ISSUED DATE :2005/08/19
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ01L60
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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