N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B
GJ01N60
N-CHANNEL ENHANC...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B
GJ01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 8 1.6A
The GJ01N60 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 600 ±20 1.6 1 6 39 0.31 13 1.6 0.5 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAS IAR EAR Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient GJ01N60 Max. Max. Symbol Rthj-c Rthj-a Value 3.2 110 Unit /W /W Page: 1/5
ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B
Electrical Characteristics (Tj...
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