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GJ01N60

GTM

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GJ01N60 N-CHANNEL ENHANC...


GTM

GJ01N60

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GJ01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A The GJ01N60 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±20 1.6 1 6 39 0.31 13 1.6 0.5 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient GJ01N60 Max. Max. Symbol Rthj-c Rthj-a Value 3.2 110 Unit /W /W Page: 1/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Electrical Characteristics (Tj...




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