GJ122

www.DataSheet4U.com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ122 Description Features NPN EPITAXIAL PLANAR T RANSISTOR The GJ122 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation(Tc=25 ) Symbol Tj Tstg BVCBO BVCEO BVEBO IC PD Ratings +150 -55 ~ +150 100 100 5 5 20 Unit V V V A W Electrical Characteristics (Rating at 25 Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 5 1 1 Typ. - ambient temperature unless otherwise specified) Max. 10 10 2 2 4 4 2.5 200 Unit V V V A A mA V V V V K K pF Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 IE=1mA, IC=0 VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 IC=3A, IB=16mA IC=5A, IB=20mA IC=5A, IB=50mA VCE=3V, IC=3A VCE=3V, IC=500mA VCE=3V, IC=3A VCB=10V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% GJ122 Page: 1/3 ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B Characteristics Curve GJ122 Page: 2/3 ISSUED DATE :2004/12/15 R...