P-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GJ20P02
P-CHANNEL ENHANCEMENT MODE ...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GJ20P02
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 52m -18A
Description
The GJ20P02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *2.5V Gate Drive Capability *Fast Switching Characteristic
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings -20 ±12 -18 -14 -50 31.25 0.25 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4.0 110 Unit /W /W
GJ20P02
Page: 1/5
ISSUED DATE :2005/12/05 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Sourc...
Similar Datasheet