DatasheetsPDF.com

POWER MOSFET. GJ20T03 Datasheet

DatasheetsPDF.com

POWER MOSFET. GJ20T03 Datasheet






GJ20T03 MOSFET. Datasheet pdf. Equivalent




GJ20T03 MOSFET. Datasheet pdf. Equivalent





Part

GJ20T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ20T03 Datasheet


GTM GJ20T03

GJ20T03; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/24 REVISED DA TE : GJ20T 03 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 30V 50m 12.5A Description The GJ20T03 pro vide the designer with the best combina tion of fast switching, ruggedized devi ce design, low on-resistance and cost-e ffectiveness. The TO-252 package is uni versally preferred.


GTM GJ20T03

for all commercial-industrial surface m ount applications and suited for low vo ltage applications such as DC/DC conver ters. *Low Gate Charge *Simple Drive Re quirement *Fast Switching Characteristi c Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Ma x. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3 .00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Mi.


GTM GJ20T03

llimeter Min. Max. 0.50 0.70 2.20 2.40 0 .45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.8 0 1.20 Absolute Maximum Ratings Parame ter Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Continuo us Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 I DM PD @TC=25 Tj, Tstg Ratings 30 ±20 12.5 8 40 12.5 0.1 -55 ~ +150 Unit V V A A A W W/ Total .



Part

GJ20T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ20T03 Datasheet




 GJ20T03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/24
REVISED DATE :
GJ20T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
50m
12.5A
Description
The GJ20T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID @TC=25
Continuous Drain Current
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±20
12.5
8
40
12.5
0.1
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
10
110
Unit
/W
/W
GJ20T03
Page: 1/4





 GJ20T03
ISSUED DATE :2005/11/24
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.02
-
6
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 50 m VGS=10V, ID=8A
- 80
VGS=4.5V, ID=5A
47
ID=10A
1.5 - nC VDS=24V
2.3 -
VGS=4.5V
6-
VDS=15V
30 -
ID=10A
10
-
ns VGS=10V
RG=3.3
3-
RD=1.5
270 430
70 -
50 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16
9
Max.
1.3
-
-
Unit Test Conditions
V IS=5A, VGS=0V
ns IS=10A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ20T03
Page: 2/4





 GJ20T03
Characteristics Curve
ISSUED DATE :2005/11/24
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ20T03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4



Recommended third-party GJ20T03 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)