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Power MOSFET. GJ3055 Datasheet

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Power MOSFET. GJ3055 Datasheet






GJ3055 MOSFET. Datasheet pdf. Equivalent




GJ3055 MOSFET. Datasheet pdf. Equivalent





Part

GJ3055

Description

N-Channel Enhancement Mode Power MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2003/07/31 REVISED DA TE :2007/01/25D GJ3055 N-CHANNEL ENHAN CEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A Description The GJ30 55 provide the designer with the best c ombination of fast switching, ruggedize d device design, low on-resistance and cost-effectiveness. The TO-252 package is universally pre.
Manufacture

GTM

Datasheet
Download GJ3055 Datasheet


GTM GJ3055

GJ3055; ferred for all commercial-industrial sur face mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Dr ive Requirement *Fast Switching Featur es Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6 .80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter .


GTM GJ3055

Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 A bsolute Maximum Ratings Parameter Drain -Source Voltage Gate-Source Voltage Con tinuous Drain Current, VGS@10V Continuo us Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 15 9 50 28 0.22 -55 ~ +150 Un it V V A A A W W/ .


GTM GJ3055

Total Power Dissipation Linear Derating Factor Operating Junction and Storage T emperature Range Thermal Data Paramete r Thermal Resistance Junction-case Ther mal Resistance Junction-ambient Max. Ma x. Symbol Rthj-c Rthj-a Value 4.8 110 U nit /W /W GJ3055 Page: 1/5 ISSUED DA TE :2003/07/31 REVISED DATE :2007/01/25 D Electrical Characteristics (Tj = 25 Parameter Drain-So.

Part

GJ3055

Description

N-Channel Enhancement Mode Power MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2003/07/31 REVISED DA TE :2007/01/25D GJ3055 N-CHANNEL ENHAN CEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A Description The GJ30 55 provide the designer with the best c ombination of fast switching, ruggedize d device design, low on-resistance and cost-effectiveness. The TO-252 package is universally pre.
Manufacture

GTM

Datasheet
Download GJ3055 Datasheet




 GJ3055
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2003/07/31
REVISED DATE :2007/01/25D
GJ3055
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
26m
15A
Description
The GJ3055 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±20
15
9
50
28
0.22
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.8
110
Unit
/W
/W
GJ3055
Page: 1/5




 GJ3055
ISSUED DATE :2003/07/31
REVISED DATE :2007/01/25D
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.037
-
4
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 26 m VGS=10V, ID=8A
- 40
VGS=4.5V, ID=6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 4.6 -
ID=8A
Qgs - 1.1 - nC VDS=24V
Qgd - 3 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 4.9 -
- 22.5 -
- 12.2 -
- 3.3 -
VDS=15V
ID=8A
ns VGS=10V
RG=3.4
RD=1.9
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 160 -
- 107 -
- 32 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
15
50
Unit Test Conditions
V IS=15A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ3055
Page: 2/5




 GJ3055
Characteristics Curve
ISSUED DATE :2003/07/31
REVISED DATE :2007/01/25D
Fig 1. Typical Output Characteristics
45
40
35
30
25
20
Fig 3. On-Resistance v.s. Gate Voltage
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ3055
Fig 6. Type Power Dissipation
Page: 3/5






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