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POWER MOSFET. GJ35N03 Datasheet

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POWER MOSFET. GJ35N03 Datasheet






GJ35N03 MOSFET. Datasheet pdf. Equivalent




GJ35N03 MOSFET. Datasheet pdf. Equivalent





Part

GJ35N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/08/16 REVISED DA TE : GJ35N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 1 3.5m 36A The GJ35N03 provide the desig ner with the best combination of fast s witching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally prefe rred for all comme.
Manufacture

GTM

Datasheet
Download GJ35N03 Datasheet


GTM GJ35N03

GJ35N03; rcial-industrial surface mount applicati ons and suited for low voltage applicat ions such as DC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Swit ching Description Features Package D imensions TO-252 REF. A B C D E F S M illimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.9 0 0.60 0.90 REF. .


GTM GJ35N03

G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1 .50 5.40 5.80 0.80 1.20 Absolute Maxim um Ratings Parameter Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Curr ent, VGS@10V Pulsed Drain Current 1 Sy mbol VDS VGS ID @TC=25 ID @TC=100 IDM P D @TC=25 2 Ratings 25 ±20 36 25 150 5 0 0.4 150 25 -55 ~ .


GTM GJ35N03

+150 Unit V V A A A W W/ mJ A Total Po wer Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Curren t Operating Junction and Storage Temper ature Range Thermal Data Parameter The rmal Resistance Junction-case Thermal R esistance Junction-ambient GJ35N03 Max. Max. Symbol Rthj-c Rthj-a Value 2.5 11 0 Unit /W /W Page:.

Part

GJ35N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/08/16 REVISED DA TE : GJ35N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 1 3.5m 36A The GJ35N03 provide the desig ner with the best combination of fast s witching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally prefe rred for all comme.
Manufacture

GTM

Datasheet
Download GJ35N03 Datasheet




 GJ35N03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ35N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
13.5m
36A
Description
The GJ35N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
36
25
150
50
0.4
150
25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
110
Unit
/W
/W
GJ35N03
Page: 1/4




 GJ35N03
ISSUED DATE :2006/08/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.037
-
26
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=18A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
-
7 13.5 m VGS=10V, ID=30A
13 20
VGS=4.5V, ID=30A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 18.4 -
ID=18A
Qgs
- 3.57 -
nC VDS=20V
Qgd - 2.9 -
VGS=5V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 11.7 -
- 3.87 -
- 32.1 -
- 5.4 -
VDS=15V
ID=18A
ns VGS=10V
RG=3.3
RD=0.83
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1176 -
- 268 -
- 142 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.5
50
Unit Test Conditions
V IS=20A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=10A.
3. Pulse width 300us, duty cycle 2%.
GJ35N03
Page: 2/4




 GJ35N03
Characteristics Curve
ISSUED DATE :2006/08/16
REVISED DATE :
Fig 1. Typical Output Characteristics
15
14
13
12
11
10
9
8
Fig 3. On-Resistance v.s. Gate Voltage
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ35N03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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