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POWER MOSFET. GJ405 Datasheet

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POWER MOSFET. GJ405 Datasheet






GJ405 MOSFET. Datasheet pdf. Equivalent




GJ405 MOSFET. Datasheet pdf. Equivalent





Part

GJ405

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/06 REVISED DA TE : GJ405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32 m -18A The GJ405 uses advanced trench technology to provide excellent on-resi stance, low gate charge and low gate re sistance. The TO-252 package is univers ally preferred for all commercial-indus trial surface moun.
Manufacture

GTM

Datasheet
Download GJ405 Datasheet


GTM GJ405

GJ405; t applications and suited for high curre nt load applications. *Simple Drive Req uirement *Lower On-resistance *Fast Swi tching Characteristic Description Fea tures Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.4 0 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2. 30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.7 0 2.20 2.40 0.45 0.


GTM GJ405

.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Conti nuous Drain Current, VGS@10V Pulsed Dra in Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ + 175 Unit V V A A A W W/ mJ A Total Po wer Dissipation Lin.


GTM GJ405

ear Derating Factor Single Pulse Avalanc he Energy EAS IAS Tj, Tstg Single Pul se Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junc tion-case Thermal Resistance Junction-a mbient Max. Max. Symbol Rthj-c Rthj-a V alue 2.5 50 Unit /W /W GJ405 Page: 1/ 4 ISSUED DATE :2006/12/06 REVISED DATE : Electrical Cha.

Part

GJ405

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/06 REVISED DA TE : GJ405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32 m -18A The GJ405 uses advanced trench technology to provide excellent on-resi stance, low gate charge and low gate re sistance. The TO-252 package is univers ally preferred for all commercial-indus trial surface moun.
Manufacture

GTM

Datasheet
Download GJ405 Datasheet




 GJ405
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GJ405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
32m
-18A
Description
The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited
for high current load applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±20
-18
-14
-40
60
0.4
61
-35
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
50
Unit
/W
/W
GJ405
Page: 1/4




 GJ405
ISSUED DATE :2006/12/06
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
-30
-1.2
-
-
- - V VGS=0, ID=-250uA
- -2.4 V VDS=VGS, ID=-250uA
17 -
S VDS=-5V, ID=-18A
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -5 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
-
- 32 m VGS=-10V, ID=-18A
- 60
VGS=-4.5V, ID=-10A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 18.7 23
ID=-18A
Qgs
- 2.54 -
nC VDS=-15V
Qgd - 5.4 -
VGS=-10V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
-
-
-
9 13
25
20
-
-
VDS=-15V
ns
VGS=-10V
RG=3
12 -
RL=0.82
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 920 1100
VGS=0V
- 190 -
pF VDS=-15V
- 122 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Reverse Recovery Time3
Reverse Recovery Charge
Symbol
VSD
IS
Trr
Qrr
Min.
-
-
-
-
Typ.
-
-
21.4
13
Max.
-1.0
-18
-
-
Unit Test Conditions
V IS=-1A, VGS=0V
A VD= VG=0V, VS=-1.0V
ns IS=-18A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=25V, L=0.1mH, RG=25 .
3. Pulse width 300us, duty cycle 2%.
GJ405
Page: 2/4




 GJ405
Characteristics Curve
ISSUED DATE :2006/12/06
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GJ405
Page: 3/4






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